公开(公告)号：US20190122867A1

公开(公告)日：2019-04-25

申请号：US15991500

申请日：2018-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki Nam ,  Sunggil Kang ,  Sungyong Lim ,  Beomjin Yoo ,  Akira Koshiishi ,  Vasily Pashkovskiy ,  Kwangyoub Heo

IPC: H01J37/32 ,  H01J1/02

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

公开(公告)号：US10998185B2

公开(公告)日：2021-05-04

申请号：US16294453

申请日：2019-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beomjin Yoo ,  Minhyoung Kim ,  Wonhyuk Jang ,  Hoseop Choi ,  Jeongmin Bang ,  KyuHee Han

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/268

Abstract: Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.

公开(公告)号：US11798788B2

公开(公告)日：2023-10-24

申请号：US17091433

申请日：2020-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki Nam ,  Sunggil Kang ,  Sungyong Lim ,  Beomjin Yoo ,  Akira Koshiishi ,  Vasily Pashkovskiy ,  Kwangyoub Heo

IPC: H01L21/3065 ,  H01J37/32 ,  H01J1/02

CPC classification number: H01J37/32596 ,  H01J1/025 ,  H01J37/32009 ,  H01J37/32899

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

公开(公告)号：US10950414B2

公开(公告)日：2021-03-16

申请号：US15983178

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki Nam ,  Akira Koshiishi ,  Kwangyoub Heo ,  Sunggil Kang ,  Beomjin Yoo ,  Sungyong Lim ,  Vasily Pashkovskiy

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/683

Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.