MICROWAVE PROBE, PLASMA MONITORING SYSTEM INCLUDING THE MICROWAVE PROBE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SYSTEM
    2.
    发明申请
    MICROWAVE PROBE, PLASMA MONITORING SYSTEM INCLUDING THE MICROWAVE PROBE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SYSTEM 有权
    微波探测器,包括微波探测器的等离子体监测系统以及使用该系统制造半导体器件的方法

    公开(公告)号:US20170069553A1

    公开(公告)日:2017-03-09

    申请号:US15163876

    申请日:2016-05-25

    Abstract: Disclosed herein are a microwave probe capable of precisely detecting a plasma state in a plasma process, a plasma monitoring system including the probe, and a method of fabricating a semiconductor device using the system. The microwave probe includes a body extending in one direction and a head which is connected to one end of the body and has a flat plate shape. In addition, in the plasma process, the microwave probe is non-invasively coupled to a chamber such that a surface of the head contacts an outer surface of a viewport of the chamber, and the microwave probe applies a microwave into the chamber through the head and receives signals generated inside the chamber through the head.

    Abstract translation: 本文公开了能够精确检测等离子体工艺中的等离子体状态的微波探测器,包括探针的等离子体监视系统以及使用该系统制造半导体器件的方法。 微波探头包括沿一个方向延伸的主体和连接到主体的一端并具有平板形状的头部。 此外,在等离子体处理中,微波探针非侵入性地联接到腔室,使得头部的表面接触腔室的视口的外表面,并且微波探头通过头部将微波施加到腔室中 并通过头部接收在腔室内产生的信号。

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