公开(公告)号：US12272535B2

公开(公告)日：2025-04-08

申请号：US17673903

申请日：2022-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jin Oh ,  Doo Young Gwak ,  Tae Hyun Kim ,  Sang Ki Nam ,  Jae Ho Jang ,  Jin Kyou Choi

IPC: H01J37/32 ,  H01L21/3065

Abstract: A spectroscopic analysis method having improved accuracy and correlation, a method for fabricating a semiconductor device using the same, and a substrate process system using the same are provided. The spectroscopic analysis method includes receiving plasma light emitted from plasma to generate an emission spectrum, detecting n (here, n is a natural number of 2 or more) peak wavelengths from the emission spectrum, generating a plurality of correlation factor time series from correlation factors between the peak wavelengths, filtering the plurality of correlation factor time series, and analyzing the plasma, using the filtered correlation factor time series.

公开(公告)号：US11605567B2

公开(公告)日：2023-03-14

申请号：US17212914

申请日：2021-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jitae Park ,  Youngjoo Lee ,  Taekyun Kang ,  Doo Young Gwak ,  Aekyung Kim ,  Hyowon Bae ,  Kyunggon You ,  Seongjin In ,  Sang Yoon Han

IPC: H01L21/66 ,  H01J37/32

Abstract: Disclosed are a method of monitoring a semiconductor device fabrication process and a method of fabricating a semiconductor device using the same. The monitoring method may include determining a normalization range of a target byproduct, which is a measurement target of byproducts produced in a chamber by an etching process, the byproducts including the target byproduct and a non-target byproduct, the target byproduct including first and second target byproducts, which are respectively produced by and before the etching process on a to-be-processed layer, obtaining a first index from a ratio of the target byproduct to the non-target byproduct, obtaining a second index by subtracting an emission intensity of the second target byproduct from the first index, obtaining a third index by integrating the second index on a time interval, and estimating a result of the etching process and presence or absence of a failure, based on the third index.