公开(公告)号：US10971343B2

公开(公告)日：2021-04-06

申请号：US16262024

申请日：2019-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Protopopov Vladimir ,  Ki Ho Hwang ,  Doug Yong Sung ,  Se Jin Oh ,  Kul Inn ,  Sung Ho Jang ,  Yun Kwang Jeon

IPC: G06K9/00 ,  H01J37/32 ,  H04N5/225

Abstract: An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

公开(公告)号：US12272535B2

公开(公告)日：2025-04-08

申请号：US17673903

申请日：2022-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jin Oh ,  Doo Young Gwak ,  Tae Hyun Kim ,  Sang Ki Nam ,  Jae Ho Jang ,  Jin Kyou Choi

IPC: H01J37/32 ,  H01L21/3065

Abstract: A spectroscopic analysis method having improved accuracy and correlation, a method for fabricating a semiconductor device using the same, and a substrate process system using the same are provided. The spectroscopic analysis method includes receiving plasma light emitted from plasma to generate an emission spectrum, detecting n (here, n is a natural number of 2 or more) peak wavelengths from the emission spectrum, generating a plurality of correlation factor time series from correlation factors between the peak wavelengths, filtering the plurality of correlation factor time series, and analyzing the plasma, using the filtered correlation factor time series.

公开(公告)号：US10481005B2

公开(公告)日：2019-11-19

申请号：US16157682

申请日：2018-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Jin Oh ,  Tae Kyun Kang ,  Yu Sin Kim ,  Jae Ik Kim ,  Chan Bin Mo ,  Doug Yong Sung ,  Seung Bin Ahn ,  Kul Inn ,  Yun Kwang Jeon

IPC: G01B11/06 ,  G01J5/00 ,  H01L21/67 ,  H01J37/32

Abstract: A semiconductor substrate measuring apparatus includes a light source unit generating irradiation light including light in a first wavelength band and light in a second wavelength band. An optical unit irradiates the irradiation light on a measurement object and condenses reflected light. A light splitting unit splits the reflected light, condensed in the optical unit, into a first optical path and a second optical path. A first detecting unit is disposed on the first optical path and detects first interference light in the first wavelength band in the reflected light. A second detecting unit is disposed on the second optical path and detects second interference light in the second wavelength band in the reflected light. A controlling unit calculates at least one of a surface shape or a thickness of the measurement object. The controlling unit calculates a temperature of the measurement object.

公开(公告)号：US10229818B2

公开(公告)日：2019-03-12

申请号：US15260910

申请日：2016-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Protopopov Vladimir ,  Ki Ho Hwang ,  Doug Yong Sung ,  Se Jin Oh ,  Kul Inn ,  Sung Ho Jang ,  Yun Kwang Jeon

IPC: G06K9/00 ,  H01J37/32 ,  H04N5/225

Abstract: An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

公开(公告)号：US20190043768A1

公开(公告)日：2019-02-07

申请号：US15895208

申请日：2018-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jin Oh ,  Yu Sin Kim ,  Jae Woo Kim ,  Jin Young Bang ,  Doug Yong Sung ,  In Yong Hwang

IPC: H01L21/66 ,  H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  G03F7/09

Abstract: Methods for fabricating semiconductor devices are provided including forming a stacked structure including a first mold layer and a second mold layer on a substrate; forming a first photoresist pattern on the stacked structure; etching the second mold layer using the first photoresist pattern as a mask; forming a second photoresist pattern by etching a portion of the first photoresist pattern; measuring a first fringe signal generated by an interference phenomenon between first reflected lights reflected from the first photoresist pattern; forming a stepped structure by etching the second mold layer and the first mold layer which is exposed, using the second photoresist pattern as a mask; measuring a second fringe signal generated by an interference phenomenon between second reflected lights reflected from the second mold layer; calculating a third fringe signal by summing the first fringe signal and the second fringe signal; calculating and a first etch rate of an upper surface of the first photoresist pattern using the third fringe signal; calculating a second etch rate of a side surface of the first photoresist pattern using the first etch rate; and controlling a degree of etching the side surface of the second photoresist pattern using the second etch rate.