公开(公告)号：US11624545B2

公开(公告)日：2023-04-11

申请号：US16721040

申请日：2019-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jin Park ,  Dong Won Koo ,  In Yong Hwang ,  Youn Tae Shin ,  Dong Hyun Lee

IPC: F25D17/08 ,  F25D23/00 ,  F25D23/12 ,  F25D27/00 ,  F25D29/00 ,  F25D11/02

Abstract: A refrigerator includes a cabinet, a cooling module including a compressor, a condenser, an expansion valve, and an evaporator, and attachable to or detachable from the cabinet so that the cooling module is removably mounted to the cabinet, an electronic device arranged in the cabinet, and an electrical box configured to be electrically connected to the electronic device and the compressor, receive power from outside and supply the received power to the electronic device and the compressor.

公开(公告)号：US20190043768A1

公开(公告)日：2019-02-07

申请号：US15895208

申请日：2018-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jin Oh ,  Yu Sin Kim ,  Jae Woo Kim ,  Jin Young Bang ,  Doug Yong Sung ,  In Yong Hwang

IPC: H01L21/66 ,  H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  G03F7/09

Abstract: Methods for fabricating semiconductor devices are provided including forming a stacked structure including a first mold layer and a second mold layer on a substrate; forming a first photoresist pattern on the stacked structure; etching the second mold layer using the first photoresist pattern as a mask; forming a second photoresist pattern by etching a portion of the first photoresist pattern; measuring a first fringe signal generated by an interference phenomenon between first reflected lights reflected from the first photoresist pattern; forming a stepped structure by etching the second mold layer and the first mold layer which is exposed, using the second photoresist pattern as a mask; measuring a second fringe signal generated by an interference phenomenon between second reflected lights reflected from the second mold layer; calculating a third fringe signal by summing the first fringe signal and the second fringe signal; calculating and a first etch rate of an upper surface of the first photoresist pattern using the third fringe signal; calculating a second etch rate of a side surface of the first photoresist pattern using the first etch rate; and controlling a degree of etching the side surface of the second photoresist pattern using the second etch rate.