GRID FOR SEMICONDUCTOR PROCESS
    2.
    发明申请

    公开(公告)号:US20250132133A1

    公开(公告)日:2025-04-24

    申请号:US18640999

    申请日:2024-04-19

    Abstract: A substrate processing apparatus comprises a process chamber, a stage in the process chamber, the stage supporting a substrate, and a grid in the process chamber and upwardly spaced apart from the stage. The grid includes a dielectric plate having a central axis that extends in a first direction, a first electrode plate embedded in the dielectric plate, a second electrode plate downwardly spaced apart from the first electrode plate and embedded in the dielectric plate, and a third electrode plate downwardly spaced apart from the second electrode plate and embedded in the dielectric plate.

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