公开(公告)号：US20230187189A1

公开(公告)日：2023-06-15

申请号：US17864541

申请日：2022-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungsub Jung ,  Sungyeol Kim ,  Sungyong Lim ,  Jaehyun Choi ,  Kyungmin Lee ,  Seungkyu Lim

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/509

CPC classification number: H01J37/32935 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32926 ,  C23C16/52 ,  C23C16/509 ,  H01J2237/24564 ,  H01J2237/3321 ,  H01J37/32183

Abstract: a plasma processing system includes a chamber providing a space for performing a plasma process on a substrate, a substrate stage having a seating surface for supporting the substrate, the substrate stage having a circular electrode and at least one annular electrode therein, an upper electrode provided over the substrate, a power supply configured to supply source power to the upper electrode, a first capacitance variator configured to vary a capacitance of the circular electrode based on an inputted first control signal, a second capacitance variator configured to vary a capacitance of the annular electrode based on an inputted second control signal, a sensor connected to the first and second capacitance variators respectively and configured to acquire electrical signal data of the circular electrode and the at least one annular electrode, and a controller configured to determine a thin film profile in first and second regions of the substrate corresponding to the circular electrode and the annular electrode respectively based on the electrical signal data obtained from the sensor, the controller being configured to output the first and second control signals respectively in order to obtain a desired thin film profile.