公开(公告)号：US09691618B2

公开(公告)日：2017-06-27

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong Sung ,  Sejin Oh ,  Je-Hun Woo ,  Hyunju Lee ,  Seungkyu Lim ,  Kiho Hwang

IPC: H01L21/26 ,  H01L21/263 ,  H01L21/683 ,  H01L21/66

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

公开(公告)号：US20160079040A1

公开(公告)日：2016-03-17

申请号：US14794383

申请日：2015-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： MyoungSoo Park ,  Hakyoung Kim ,  Yumi Sung ,  Seungkyu Lim

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/3244 ,  H01J2237/0203

Abstract: Plasma processing devices may include a process chamber body, a substrate support unit in a lower portion of the process chamber body, and a window part in an upper portion of the process chamber body. The window part may include a base layer and a surface protection layer on the base layer and configured to face the substrate support unit. The surface protection layer may include an oxide having a columnar structure.

Abstract translation: 等离子体处理装置可以包括处理室主体，处理室主体的下部中的基板支撑单元和处理室主体的上部中的窗口部分。 窗口部分可以包括基底层和基底层上的表面保护层，并且被配置为面对衬底支撑单元。 表面保护层可以包括具有柱状结构的氧化物。

公开(公告)号：US20230187189A1

公开(公告)日：2023-06-15

申请号：US17864541

申请日：2022-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungsub Jung ,  Sungyeol Kim ,  Sungyong Lim ,  Jaehyun Choi ,  Kyungmin Lee ,  Seungkyu Lim

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/509

CPC classification number: H01J37/32935 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32926 ,  C23C16/52 ,  C23C16/509 ,  H01J2237/24564 ,  H01J2237/3321 ,  H01J37/32183

Abstract: a plasma processing system includes a chamber providing a space for performing a plasma process on a substrate, a substrate stage having a seating surface for supporting the substrate, the substrate stage having a circular electrode and at least one annular electrode therein, an upper electrode provided over the substrate, a power supply configured to supply source power to the upper electrode, a first capacitance variator configured to vary a capacitance of the circular electrode based on an inputted first control signal, a second capacitance variator configured to vary a capacitance of the annular electrode based on an inputted second control signal, a sensor connected to the first and second capacitance variators respectively and configured to acquire electrical signal data of the circular electrode and the at least one annular electrode, and a controller configured to determine a thin film profile in first and second regions of the substrate corresponding to the circular electrode and the annular electrode respectively based on the electrical signal data obtained from the sensor, the controller being configured to output the first and second control signals respectively in order to obtain a desired thin film profile.