Plasma processing apparatus
    2.
    发明授权

    公开(公告)号:US11605529B2

    公开(公告)日:2023-03-14

    申请号:US17215232

    申请日:2021-03-29

    Abstract: A plasma processing apparatus includes a chamber; a support member in the chamber; a window plate at an upper portion of the chamber and including a window plate body and a fastening hole, wherein the fastening hole includes a lower fastening hole portion and an upper fastening hole portion. and a gas injector including a first body having a plurality of distribution nozzles and a second body having an accommodating groove to which the first body is fastened and a plurality of injection nozzles. The second body includes a first portion disposed inside the upper fastening hole portion, a second portion disposed inside the lower fastening hole portion, and a third portion disposed below the window plate. The second portion of the second body includes a gas hole extending from the accommodating groove to an external side surface of the second portion of the second body.

    Plasma Processing Devices Having a Surface Protection Layer
    4.
    发明申请
    Plasma Processing Devices Having a Surface Protection Layer 审中-公开
    具有表面保护层的等离子体处理装置

    公开(公告)号:US20160079040A1

    公开(公告)日:2016-03-17

    申请号:US14794383

    申请日:2015-07-08

    Abstract: Plasma processing devices may include a process chamber body, a substrate support unit in a lower portion of the process chamber body, and a window part in an upper portion of the process chamber body. The window part may include a base layer and a surface protection layer on the base layer and configured to face the substrate support unit. The surface protection layer may include an oxide having a columnar structure.

    Abstract translation: 等离子体处理装置可以包括处理室主体,处理室主体的下部中的基板支撑单元和处理室主体的上部中的窗口部分。 窗口部分可以包括基底层和基底层上的表面保护层,并且被配置为面对衬底支撑单元。 表面保护层可以包括具有柱状结构的氧化物。

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