公开(公告)号：US12020909B2

公开(公告)日：2024-06-25

申请号：US18188095

申请日：2023-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Yeob Lee ,  Sungyeol Kim ,  Jinyeong Yun ,  Minsung Kim ,  HoSun Yoo

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32798

Abstract: A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.

公开(公告)号：US20250004028A1

公开(公告)日：2025-01-02

申请号：US18884376

申请日：2024-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyeong Yun ,  Meehyun Lim ,  Sungjin Kim ,  Masahiko Yamabe ,  Sungyeol Kim ,  Sungyong Lim ,  Sunghwi Cho

IPC: G01R29/12 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.

公开(公告)号：US20240055243A1

公开(公告)日：2024-02-15

申请号：US18124954

申请日：2023-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekjin Kim ,  Meehyun Lim ,  Sungyeol Kim ,  Junbum Park ,  Sungyoung Yoon ,  Jinyeong Yun ,  Jungchul Lee ,  Sungyong Lim ,  Sunghwi Cho

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32972 ,  H01L21/67253 ,  H01L21/67069 ,  H01L21/6833 ,  H01J2237/24495

Abstract: A semiconductor equipment monitoring apparatus including a wafer-type sensor inside a process chamber and configured to sense a plasma state inside the process chamber; a light detector and analyzer configured to detect and analyze light sensed by the wafer-type sensor; and a light coupler between the wafer-type sensor and the light detector and analyzer and configured to transmit the light sensed by the wafer-type sensor to the light detector and analyzer. The wafer-type sensor includes a plurality of sensors each comprising a passive element.

公开(公告)号：US20230408574A1

公开(公告)日：2023-12-21

申请号：US18240957

申请日：2023-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Meehyun Lim ,  Sungyeol Kim ,  Hyungjung Yong ,  Jinyeong Yun

IPC: G01R31/28 ,  H01L25/065 ,  H01L23/00

CPC classification number: G01R31/2803 ,  H01L25/0657 ,  H01L24/14 ,  G01R31/2815

Abstract: A test method for a semiconductor device includes determining a contact failure between a first semiconductor chip and a second semiconductor chip during assembly of a semiconductor package including the first semiconductor chip and the second semiconductor chip, using a test circuit embedded in the first semiconductor chip, and after the assembly of the semiconductor package, determining whether the semiconductor package is defective by using the test circuit.

公开(公告)号：US11646179B2

公开(公告)日：2023-05-09

申请号：US17335659

申请日：2021-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Yeob Lee ,  Sungyeol Kim ,  Jinyeong Yun ,  Minsung Kim ,  HoSun Yoo

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715

Abstract: A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.

公开(公告)号：US20230230815A1

公开(公告)日：2023-07-20

申请号：US18188095

申请日：2023-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Yeob Lee ,  Sungyeol Kim ,  Jinyeong Yun ,  Minsung Kim ,  HoSun Yoo

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32458 ,  H01J37/32642 ,  H01J37/32743 ,  H01J37/32715 ,  H01J37/3244 ,  H01J37/32798

Abstract: A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.

公开(公告)号：US20230194591A1

公开(公告)日：2023-06-22

申请号：US17975202

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyeong Yun ,  Meehyun Lim ,  Sungjin Kim ,  Masahiko Yamabe ,  Sungyeol Kim ,  Sungyong Lim ,  Sunghwi Cho

IPC: G01R29/12 ,  H01L21/687 ,  H01L21/683 ,  H01L21/66

CPC classification number: G01R29/12 ,  H01L21/6833 ,  H01L21/68742 ,  H01L22/12

Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.

公开(公告)号：US12105132B2

公开(公告)日：2024-10-01

申请号：US17975202

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyeong Yun ,  Meehyun Lim ,  Sungjin Kim ,  Masahiko Yamabe ,  Sungyeol Kim ,  Sungyong Lim ,  Sunghwi Cho

IPC: G01R29/12 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

CPC classification number: G01R29/12 ,  H01L21/6833 ,  H01L21/68742 ,  H01L22/12

Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.

公开(公告)号：US11782085B2

公开(公告)日：2023-10-10

申请号：US16924971

申请日：2020-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Meehyun Lim ,  Sungyeol Kim ,  Hyungjung Yong ,  Jinyeong Yun

IPC: G01R31/28 ,  H01L23/00 ,  H01L25/065

CPC classification number: G01R31/2803 ,  G01R31/2815 ,  H01L24/14 ,  H01L25/0657

Abstract: A test method for a semiconductor device includes determining a contact failure between a first semiconductor chip and a second semiconductor chip during assembly of a semiconductor package including the first semiconductor chip and the second semiconductor chip, using a test circuit embedded in the first semiconductor chip, and after the assembly of the semiconductor package, determining whether the semiconductor package is defective by using the test circuit.

公开(公告)号：US20220093369A1

公开(公告)日：2022-03-24

申请号：US17335659

申请日：2021-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Yeob Lee ,  Sungyeol Kim ,  Jinyeong Yun ,  Minsung Kim ,  HoSun Yoo

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.