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公开(公告)号：US10957565B2
公开(公告)日：2021-03-23
申请号：US16941405
申请日：2020-07-28
Applicant: Applied Materials, Inc.
Inventor： Shimin Mao , Simon Huang , Ashish Goel , Anantha Subramani , Philip Allan Kraus
Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.
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Patent Agency Ranking
公开(公告)号：US20210028012A1
公开(公告)日：2021-01-28
申请号：US17070821
申请日：2020-10-14
Applicant: Applied Materials, Inc.
Inventor： Kelvin Chan , Travis Koh , Simon Huang , Philip Allan Kraus
Abstract: Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.
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公开(公告)号：US10115593B2
公开(公告)日：2018-10-30
申请号：US15833728
申请日：2017-12-06
Applicant: APPLIED MATERIALS, INC.
Inventor： David Knapp , Simon Huang , Jeffrey W. Anthis , Philip Alan Kraus , David Thompson
IPC: H01L21/033 , H01J37/32 , H01L21/02 , B82Y30/00 , C08K3/04
Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.
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公开(公告)号：US12094707B2
公开(公告)日：2024-09-17
申请号：US17070821
申请日：2020-10-14
Applicant: Applied Materials, Inc.
Inventor： Kelvin Chan , Travis Koh , Simon Huang , Philip Allan Kraus
CPC classification number: H01L21/02274 , C23C16/26 , C23C16/52 , C23C16/50
Abstract: Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.
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公开(公告)号：US10763143B2
公开(公告)日：2020-09-01
申请号：US15681263
申请日：2017-08-18
Applicant: APPLIED MATERIALS, INC.
Inventor： Shimin Mao , Simon Huang , Ashish Goel , Anantha Subramani , Philip Allan Kraus
Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.
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公开(公告)号：US20190057889A1
公开(公告)日：2019-02-21
申请号：US15681263
申请日：2017-08-18
Applicant: APPLIED MATERIALS, INC.
Inventor： Shimin Mao , Simon Huang , Ashish Goel , Anantha Subramani , Philip Allan Kraus
Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.
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