Invention Application
- Patent Title: PLASMA ENHANCED CVD WITH PERIODIC HIGH VOLTAGE BIAS
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Application No.: US17070821Application Date: 2020-10-14
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Publication No.: US20210028012A1Publication Date: 2021-01-28
- Inventor: Kelvin Chan , Travis Koh , Simon Huang , Philip Allan Kraus
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/52 ; C23C16/26
Abstract:
Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.
Public/Granted literature
- US12094707B2 Plasma enhanced CVD with periodic high voltage bias Public/Granted day:2024-09-17
Information query
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