公开(公告)号：US20200232088A1

公开(公告)日：2020-07-23

申请号：US15758837

申请日：2016-04-28

Applicant: Applied Materials, Inc.

Inventor： John M. WHITE ,  Oliver GRAW

IPC: C23C14/35 ,  C23C14/24 ,  C23C14/34 ,  C23C14/56 ,  C23C16/54 ,  C23C14/50 ,  H01J37/34 ,  H01J37/32

Abstract: The present disclosure provides an apparatus for vacuum deposition on a substrate. The apparatus includes a vacuum chamber having a first area and a first deposition area, one or more deposition sources at the first deposition area, wherein the one or more deposition sources are configured for vacuum deposition on at least a first substrate while the at least a first substrate is transported along a first transport direction past the one or more deposition sources, and a first substrate transport unit in the first area, wherein the first substrate transport unit is configured for moving the at least a first substrate within the first area in a first track switch direction, which is different from the first transport direction.

公开(公告)号：US20170067149A1

公开(公告)日：2017-03-09

申请号：US15118810

申请日：2014-02-21

Applicant: Thomas DEPPISCH ,  Applied Materials, Inc.

Inventor： Thomas DEPPISCH

IPC: C23C14/58 ,  C23C14/24 ,  H01J37/32 ,  C23C16/50 ,  C23C16/56

CPC classification number: C23C14/5873 ,  C23C14/24 ,  C23C14/562 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32082 ,  H01J2237/3321 ,  H01J2237/335

Abstract: According to the present disclosure, a flexible substrate coating apparatus is provided. The flexible substrate coating apparatus includes a vacuum process chamber for processing a flexible substrate. The vacuum process chamber includes one or more deposition units and a cleaning unit positioned directly downstream of the one or more deposition units. In another aspect, a method for depositing a thin-film on a flexible substrate is provided. The method for depositing a thin-film on a flexible substrate includes vacuum coating of the flexible substrate, thereby depositing one or more layers on the flexible substrate, and cleaning the flexible substrate directly downstream of the coating.

Abstract translation: 根据本公开，提供了柔性基板涂布装置。 柔性基板涂布装置包括用于处理柔性基板的真空处理室。 真空处理室包括一个或多个沉积单元和位于该一个或多个沉积单元的直接下游的清洁单元。 另一方面，提供了一种在柔性基板上沉积薄膜的方法。 用于在柔性基板上沉积薄膜的方法包括真空涂覆柔性基底，从而在柔性基底上沉积一层或多层，以及直接在涂层的下游清洁柔性基底。

公开(公告)号：US20200083452A1

公开(公告)日：2020-03-12

申请号：US15743614

申请日：2017-02-24

Applicant: Applied Materials, Inc.

Inventor： Matthias HEYMANNS ,  Stefan BANGERT ,  Oliver HEIMEL ,  Andreas SAUER ,  Sebastian Gunther ZANG

IPC: H01L51/00 ,  C23C14/04 ,  C23C14/56 ,  H01L51/56

Abstract: The present disclosure provides an apparatus (200) for vacuum processing of a substrate (10). The apparatus (200) includes a vacuum chamber, a first track arrangement (110) configured for transportation of a substrate carrier (120), a second track arrangement (130) configured for transportation of a mask carrier (140), and a holding arrangement configured for positioning the substrate carrier (120) and the mask carrier (140) with respect to each other. The first track arrangement (110) includes a first portion configured to support the substrate carrier (120) at a first end (12) of the substrate (10) and a second portion configured to support the substrate carrier (120) at a second end (14) of the substrate (10) opposite the first end (12) of the substrate (10). The second track arrangement (120) includes a further first portion configured to support the mask carrier (140) at a first end (22) of a mask (20) and a further second portion configured to support the mask carrier (140) at a second end (24) of the mask (20) opposite the first end (22) of the mask (20). A first distance (D) between the first portion and the second portion of the first track arrangement (110) and a second distance (D′) between the further first portion and the further second portion of the second track arrangement (130) are essentially the same.

公开(公告)号：US20180351164A1

公开(公告)日：2018-12-06

申请号：US15570988

申请日：2015-05-15

Applicant: Applied Materials, Inc.

Inventor： Anke HELLMICH ,  Thomas Werner ZILBAUER ,  Jose Manuel DIEGUEZ-CAMPO ,  Stefan KELLER ,  Georg JOST

IPC: H01M4/1395 ,  H01M4/04 ,  H01M4/38 ,  H01M4/40 ,  H01M10/052 ,  H01M6/40

CPC classification number: H01M4/1395 ,  H01M4/0423 ,  H01M4/0426 ,  H01M4/382 ,  H01M4/405 ,  H01M6/40 ,  H01M10/052 ,  H01M10/0585

Abstract: The present disclosure provides a masking device for use in a lithium deposition process in the manufacturing of thin film batteries. The masking device includes a mask portion made of a metal or metal alloy, and one or more openings in the mask portion, wherein the one or more openings are configured to allow particles of a deposition material to pass through the mask portion, and wherein a size of each opening of the one or more openings, is at least 0.5 cm2.

公开(公告)号：US20170152968A1

公开(公告)日：2017-06-01

申请号：US15110714

申请日：2016-04-06

Applicant: Applied Materials, Inc.

Inventor： Govinda RAJ ,  Hanish KUMAR ,  Lin ZHANG ,  Stanley WU

IPC: F16K41/10 ,  H01J37/32 ,  F16L11/15 ,  H01L21/687

CPC classification number: F16K41/10 ,  C23C16/4404 ,  F16L11/15 ,  H01J37/32477 ,  H01J37/32495 ,  H01L21/68757 ,  H01L21/68792

Abstract: Implementations described herein protect a chamber components from corrosive cleaning gases used at high temperatures. In one embodiment, a chamber component includes at least a bellows that includes a top mounting flange coupled to a bottom mounting flange by a tubular accordion structure. A coating is disposed on an exterior surface of at least the tubular accordion structure. The coating includes of at least one of polytetrafluoroethylene, parylene C, parylene D, diamond-like carbon (DLC), yttria stabilized zirconia, nickel, alumina, or aluminum silicon magnesium yttrium oxygen compound. In one embodiment, the chamber component is a valve having an internal bellows.

公开(公告)号：US20160244870A1

公开(公告)日：2016-08-25

申请号：US15024001

申请日：2013-09-24

Applicant: Frank SCHNAPPENBERGER ,  Anke HELLMICH ,  Thomas KOCH ,  Thomas DEPPISCH

Inventor： Frank SCHNAPPENBERGER ,  Anke HELLMICH ,  Thomas KOCH ,  Thomas DEPPISCH

IPC: C23C14/00 ,  C23C14/54

CPC classification number: C23C14/0042 ,  C23C14/544 ,  H01J37/32449 ,  H01J37/32981 ,  H01J37/3299

Abstract: A method for controlling a gas supply to a process chamber is provided. The method includes: measuring a gas parameter by each of two or more sensors provided in the process chamber; determining a combined gas parameter from the measured gas parameters; and controlling the gas supply to the process chamber based on the determined combined gas parameter.

Abstract translation: 提供了一种用于控制对处理室的气体供应的方法。 该方法包括：通过设置在处理室中的两个或更多个传感器中的每一个测量气体参数; 根据测量的气体参数确定组合气体参数; 以及基于所确定的组合气体参数来控制对所述处理室的气体供应。

公开(公告)号：US20250069959A1

公开(公告)日：2025-02-27

申请号：US18455505

申请日：2023-08-24

Applicant: Applied Materials, Inc.

Inventor： Mayur Govind Kulkarni

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/677 ,  H01L21/683

Abstract: A sensor can be configured to measure wafer bowing characteristics associated with a bow of a wafer after a first fabrication process is performed on the wafer in a first processing chamber and before a second fabrication process is performed on the wafer in a second processing chamber. A transfer chamber, including the sensor, can be coupled to a first process chamber and a second process chamber. The wafer bowing characteristics can be used by a controller to determine recipe parameters. The recipe parameters can be used by the controller to control environmental conditions in the transfer chamber and/or processing chamber and cause the processing chamber to perform its associated fabrication process using the recipe parameters.

公开(公告)号：US20250069926A1

公开(公告)日：2025-02-27

申请号：US18236554

申请日：2023-08-22

Applicant: Applied Materials, Inc.

Inventor： Arunkumar Ramachandraiah ,  Paul Reuter ,  Devendra Holeyannavar ,  Steven Trey Tindel ,  Dean Hruzek ,  Jeffrey Hudgens ,  Maureen Breiling ,  Venkatesh Chinnaplar Rajappa ,  Micah E. Klaeser ,  Benjamin Johnston ,  Alton Wang ,  Wei Siang Chao ,  Chandrakant Sapkale ,  Shiva Prasad Kota ,  Latha Ramesh

IPC: H01L21/677 ,  B25J11/00 ,  G03F7/00 ,  H01L21/67 ,  H01L21/687

Abstract: Integrated substrate processing systems are disclosed that are able to achieve high-volume processing of substrates (e.g., greater than 120 substrates per hour) using environmentally sensitive processes and/or tools, such as photolithography processes and/or tools. In some embodiments, for example, the integrated substrate processing system may include an EFEM and a processing tool enclosure that are coupled together to form an integrated processing environment. The integrated substrate processing system may operate to maintain substantially uniform conditions (e.g., at a uniform temperature and relative humidity) throughout the integrated environment, and in some embodiments, may utilize an external air source, such as a remote air module (RAM), in order to do so. In some embodiments, high-volume processing of substrates may be further facilitated by employing specialized substrate handling robots and/or specially adapting the EFEM and/or processing tool enclosure.

公开(公告)号：US20250069923A1

公开(公告)日：2025-02-27

申请号：US18942200

申请日：2024-11-08

Applicant: Applied Materials, Inc.

Inventor： Kevin Brashear ,  Ashley M. Okada ,  Dennis L. Demars ,  Zhiyuan Ye ,  Jaidev Rajaram ,  Marcel E. Josephson

IPC: H01L21/67 ,  G05D11/13

Abstract: A master controller identifies a flow ratio setpoint for at least one of a process gas or a carrier gas flow to a process chamber through a set of mass flow controllers. The master controller determines an amount of gas loss within the system due to the abatement sub-system. The master controller determines a flow setpoint for the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers based on the identified flow ratio setpoint and the determined amount of gas loss. The master controller controls the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers according to the determined flow setpoint for each of the set of mass flow controllers

公开(公告)号：US20250069915A1

公开(公告)日：2025-02-27

申请号：US18811911

申请日：2024-08-22

Applicant: Applied Materials, Inc.

Inventor： Thomas BREZOCZKY ,  Punnati KRUSHNA REDDY ,  Azhar ALI M.A. ,  Kirankumar Neelasandra SAVANDAIAH ,  Lakshmikanth Krishnamurthy SHIRAHATTI ,  Dhritiman Subha KASHYAP

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/677 ,  H01L21/687

Abstract: Degas stations for degassing substrates that are conveyed through a substrate processing system on a magnetically levitated carrier and related methods are provided. The method includes magnetically levitating a carrier with a substrate disposed thereon in a first position between a reflector assembly and a heater assembly disposed within a housing of the station. The method further includes moving both the reflector assembly and the heater assembly from a retracted position to an extended position while the carrier is disposed between the reflector assembly and heater assembly. The method further includes degassing the substrate disposed on the carrier with the heater assembly while the reflector assembly and heater assembly are each in the extended position, wherein the degassing includes pumping a purge gas through a gas port formed in at least one of the reflector assembly or the heater assembly towards the substrate.