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    PROCESS STACK FOR CVD PLASMA TREATMENT
    1.
    发明申请
    PROCESS STACK FOR CVD PLASMA TREATMENT 有权

    公开(公告)号：US20250037976A1

    公开(公告)日：2025-01-30

    申请号：US18227767

    申请日：2023-07-28

    Applicant: Applied Materials, Inc.

    Inventor： Anirudh K. Alewoor ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni

    IPC: H01J37/32 ,  C23C16/44

    Abstract: Gas distribution assemblies, processing chambers, and methods for processing substrates are provided. A substrate processing chamber includes a chamber body having a first end and a second end, a lid coupled to the first end of the chamber body, an isolator disposed on an upper surface of the lid, a faceplate disposed on an upper surface of the isolator, a substrate support disposed on a shaft extending through the second end of the chamber body, a pumping ring positioned within the chamber body, and an exhaust outlet in fluid communication with a system foreline and the plurality of apertures. The processing chamber defines a processing region between the substrate support and the faceplate. The pumping ring includes a flange extending in a plane generally parallel with a top surface of the substrate support that defines a plurality of apertures.

    ISOLATOR FOR PROCESSING CHAMBERS
    5.
    发明申请
    ISOLATOR FOR PROCESSING CHAMBERS 有权

    公开(公告)号：US20220328293A1

    公开(公告)日：2022-10-13

    申请号：US17228996

    申请日：2021-04-13

    Applicant: Applied Materials, Inc.

    Inventor： Akshay Dhanakshirur ,  Saketh Pemmasani ,  Mayur Govind Kulkarni ,  Madhu Santosh Kumar Mutyala

    IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458

    Abstract: Apparatus and methods for reducing undesirable residue material deposition and buildup on one or more surfaces within a processing chamber are provided herein. In embodiments disclosed herein, a processing chamber includes a chamber body having a chamber base, one or more sidewalls, and a chamber lid defining a processing volume; a showerhead disposed in the chamber lid and having a bottom surface adjacent the processing volume; and an isolator disposed between the chamber lid and the one or more sidewalls. The isolator includes a first end contacting the showerhead; a second end opposite the first end; an angled inner wall connected to the first end and extending radially outwardly from the first end towards the second end; and a lower inner wall at a different angle from the angled inner wall. The first end and the angled inner wall of the isolator form a first angle less than 90°.

    SHAPED FACEPLATE FOR EXTREME EDGE FILM UNIFORMITY
    6.
    发明申请
    SHAPED FACEPLATE FOR EXTREME EDGE FILM UNIFORMITY 有权

    公开(公告)号：US20250029849A1

    公开(公告)日：2025-01-23

    申请号：US18223184

    申请日：2023-07-18

    Applicant: Applied Materials, Inc.

    Inventor： Anish Janakiraman ,  Mayur Govind Kulkarni ,  Deenesh Padhi

    IPC: H01L21/67 ,  H01L21/687

    Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support within the chamber body. The substrate support may define a substrate support surface. The chambers may include a faceplate supported atop the chamber body. The substrate support and a bottom surface of the faceplate may at least partially define a processing region. The bottom surface of the faceplate may define an annular protrusion that is directly above at least a portion of a radially outer 10% of the substrate support surface and an annular groove that is positioned radially outward of the annular protrusion. At least a portion of the annular groove may extend radially outward beyond the substrate support surface. The faceplate may define apertures through the faceplate. A first subset of the apertures may extend through the annular protrusion and a second subset of the apertures may extend through the annular groove.

    DYNAMIC PROCESSING CHAMBER BAFFLE
    7.
    发明申请
    DYNAMIC PROCESSING CHAMBER BAFFLE 有权

    公开(公告)号：US20230114104A1

    公开(公告)日：2023-04-13

    申请号：US17498189

    申请日：2021-10-11

    Applicant: Applied Materials, Inc.

    Inventor： Udit S. Kotagi ,  Mayur Govind Kulkarni

    IPC: H01J37/32

    Abstract: Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.

    HIGH HEAT LOSS HEATER AND ELECTROSTATIC CHUCK FOR SEMICONDUCTOR PROCESSING
    8.
    发明申请
    HIGH HEAT LOSS HEATER AND ELECTROSTATIC CHUCK FOR SEMICONDUCTOR PROCESSING 有权

    公开(公告)号：US20220127723A1

    公开(公告)日：2022-04-28

    申请号：US17079155

    申请日：2020-10-23

    Applicant: Applied Materials, Inc.

    Inventor： Jian Li ,  Juan Carlos Rocha-Alvarez ,  Mayur Govind Kulkarni ,  Paul L. Brillhart ,  Vidyadharan Srinivasamurthy ,  Katherine Woo ,  Wenhao Zhang

    IPC: C23C16/458 ,  H01J37/32

    Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The substrate support surface may include a dielectric coating. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a cooling hub positioned below a base of the support stem and coupled with a cooling fluid source. The electrostatic chuck body may define at least one cooling channel that is in communication with a cooling fluid source. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include an AC power rod extending through the support stem and electrically coupled with the heater. The substrate support assemblies may include a plurality of voids formed within the electrostatic chuck body between the at least one cooling channel and the heater.

    MODULAR PRECURSOR DELIVERY AND SPLITTING FOR FAST SWITCHING
    10.
    发明公开
    MODULAR PRECURSOR DELIVERY AND SPLITTING FOR FAST SWITCHING 审中-公开

    公开(公告)号：US20240234167A1

    公开(公告)日：2024-07-11

    申请号：US18095262

    申请日：2023-01-10

    Applicant: Applied Materials, Inc.

    Inventor： Shashank Sharma ,  Udit Suryakant Kotagi ,  Diwakar Kedlaya ,  Mayur Govind Kulkarni ,  Rupankar Choudhury

    IPC: H01L21/67

    CPC classification number: H01L21/67017 ,  H01L21/67103 ,  H01L21/67196

    Abstract: Exemplary substrate processing systems may include a lid plate. The systems may include a plurality of processing regions. The systems may include at least one splitter. Each splitter may include a top surface and side surfaces. Each splitter may define an inlet and a plurality of outlets. Each inlet and outlet may extend through a side surface. Each splitter may define an inlet lumen that extends from the fluid inlet to a hub. Each splitter may define a plurality of outlet lumens that each extend from the hub to one of the outlets. Each of the outlet lumens may have a same length. The systems may include a plurality of output manifolds. Each of the output manifolds may be coupled with a respective processing region. The systems may include a plurality of valves. At least one valve may be coupled between each outlet and an output manifold.

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