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公开(公告)号：US20240249953A1
公开(公告)日：2024-07-25
申请号：US18098791
申请日：2023-01-19
发明人： Yeonju Kwak , Jeong Hwan Kim , Qian Fu , Siyu Zhu , Hang Yu , Srinivas Guggilla
IPC分类号： H01L21/311 , H01J37/32
CPC分类号： H01L21/31122 , H01J37/32816 , H01L21/31144 , H10B69/00
摘要： Exemplary methods of semiconductor processing may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a boron-containing material overlying a carbon-containing material. The methods may include generating plasma effluents of the fluorine-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor. The methods may include removing the boron-containing material from the substrate.
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公开(公告)号：US12020907B2
公开(公告)日：2024-06-25
申请号：US16844106
申请日：2020-04-09
CPC分类号： H01J37/32449 , H01J37/32366 , H01J37/32513 , H01J37/32623 , H01J37/32743 , H01J37/32834 , H01L21/0262 , H01J2237/332
摘要： Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The faceplate may be characterized by a central axis. The faceplate may define a plurality of apertures through the faceplate distributed in a number of rings. Each ring of apertures may include a scaled increase in aperture number from a ring radially inward. A radially outermost ring of apertures may be characterized by a number of apertures reduced from the scaled increase in aperture number.
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公开(公告)号：US11935751B2
公开(公告)日：2024-03-19
申请号：US17330013
申请日：2021-05-25
发明人： Siyu Zhu , Chuanxi Yang , Hang Yu , Deenesh Padhi , Yeonju Kwak , Jeong Hwan Kim , Qian Fu , Xiawan Yang
IPC分类号： H01L21/033 , C23C16/04 , C23C16/34 , C23C16/458 , C23C16/50 , H01J37/32 , H01L21/311
CPC分类号： H01L21/0337 , C23C16/042 , C23C16/342 , C23C16/4584 , C23C16/50 , H01J37/32449 , H01L21/0332 , H01L21/31144 , H01J2237/332
摘要： Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.
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公开(公告)号：US20220216048A1
公开(公告)日：2022-07-07
申请号：US17142641
申请日：2021-01-06
发明人： Tianyang Li , Deenesh Padhi , Xinhai Han , Hang Yu , Chuan Ying Wang
IPC分类号： H01L21/02
摘要： Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.
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公开(公告)号：US20220157602A1
公开(公告)日：2022-05-19
申请号：US16951495
申请日：2020-11-18
IPC分类号： H01L21/02 , H01L21/67 , C23C16/455 , H01L21/3065
摘要： Exemplary deposition methods may include introducing a precursor into a processing region of a semiconductor processing chamber via a faceplate of the semiconductor processing chamber. The methods may include flowing an oxygen-containing precursor into the processing region from beneath a pedestal of the semiconductor processing chamber. The pedestal may support a substrate. The substrate may define a trench in a surface of the substrate. The methods may include forming a first plasma of the precursor in the processing region of the semiconductor processing chamber. The methods may include depositing a first oxide film within the trench. The methods may include forming a second plasma in the processing region. The methods may include etching the first oxide film, while flowing the oxygen-containing precursor. The methods may include re-forming the first plasma in the processing region. The methods may also include depositing a second oxide film over the etched oxide film.
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公开(公告)号：US20220119952A1
公开(公告)日：2022-04-21
申请号：US17074961
申请日：2020-10-20
发明人： Rana Howlader , Hang Yu , Madhu Santosh Kumar Mutyala , Zheng John Ye , Abhigyan Keshri , Sanjay Kamath , Daemian Raj Benjamin Raj , Deenesh Padhi
IPC分类号： C23C16/50 , C23C16/40 , H01L21/02 , C23C16/458 , C23C16/455
摘要： Exemplary deposition methods may include electrostatically chucking a semiconductor substrate at a first voltage within a processing region of a semiconductor processing chamber. The methods may include performing a deposition process. The deposition process may include forming a plasma within the processing region of the semiconductor processing chamber. The methods may include halting formation of the plasma within the semiconductor processing chamber. The methods may include, simultaneously with the halting, increasing the first voltage of electrostatic chucking to a second voltage. The methods may include purging the processing region of the semiconductor processing chamber.
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公开(公告)号：US20210319981A1
公开(公告)日：2021-10-14
申请号：US16844106
申请日：2020-04-09
摘要： Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The faceplate may be characterized by a central axis. The faceplate may define a plurality of apertures through the faceplate distributed in a number of rings. Each ring of apertures may include a scaled increase in aperture number from a ring radially inward. A radially outermost ring of apertures may be characterized by a number of apertures reduced from the scaled increase in aperture number.
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公开(公告)号：US11136665B2
公开(公告)日：2021-10-05
申请号：US16259011
申请日：2019-01-28
发明人： Dale Du Bois , Mohamad A. Ayoub , Robert Kim , Amit Kumar Bansal , Mark Fodor , Binh Nguyen , Siu F. Cheng , Hang Yu , Chiu Chan , Ganesh Balasubramanian , Deenesh Padhi , Juan Carlos Rocha
IPC分类号： C23C16/04 , H01J37/32 , C23C14/04 , H01J37/34 , C30B25/12 , H01L21/687 , C23C16/44 , C23C16/455 , C23C16/458
摘要： Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.
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公开(公告)号：US10515796B2
公开(公告)日：2019-12-24
申请号：US16176267
申请日：2018-10-31
发明人： Michael Wenyoung Tsiang , Hang Yu , Deenesh Padhi , Tza-Jing Gung
IPC分类号： H01L21/02 , H01L21/033 , C23C16/505 , C23C16/34
摘要： Embodiments described herein relate to methods of forming silicon nitride films. In one embodiment, a first process gas set including a silicon-containing gas and a first nitrogen-containing gas is flowed into the process chamber. An initiation layer is deposited by applying a first radio frequency power to the first process gas set at a first frequency and a first power level. The first flow of the first nitrogen-containing gas of the first process gas set is discontinued and a second process gas set including the silicon-containing gas, a second nitrogen-containing gas, and a hydrogen-containing gas is flowed into the process chamber. A bulk silicon nitride layer is deposited on the initiation layer by applying a second RF power to the second process gas set at a second frequency higher than the first frequency and a second power level higher than the first power level.
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公开(公告)号：US20240014039A1
公开(公告)日：2024-01-11
申请号：US17861691
申请日：2022-07-11
发明人： Jeong Hwan Kim , Yeonju Kwak , Qian Fu , Siyu Zhu , Chuanxi Yang , Hang Yu
IPC分类号： H01L21/033
CPC分类号： H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/0338
摘要： Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the oxygen-containing precursor to produce oxygen-containing plasma effluents. The methods may include contacting a substrate housed in the processing region with the oxygen-containing plasma effluents. The substrate may include a boron-and-nitrogen-containing material overlying a carbon-containing material. The boron-and-nitrogen-containing material comprises a plurality of openings. The methods may include etching the carbon-containing material.
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