公开(公告)号：US12148475B2

公开(公告)日：2024-11-19

申请号：US17705744

申请日：2022-03-28

Applicant: Applied Materials, Inc.

Inventor： Chang Seok Kang ,  Tomohiko Kitajima ,  Gill Yong Lee ,  Qian Fu ,  Sung-Kwan Kang ,  Takehito Koshizawa ,  Fredrick Fishburn

IPC: G11C16/04 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: Described is a memory string including at least one select gate for drain (SGD) transistor and at least one memory transistor in a vertical hole extending through a memory stack on a substrate. The memory stack comprises alternating word lines and dielectric material. There is at least one select-gate-for-drain (SGD) transistor in a first vertical hole extending through the memory stack, the select-gate-for-drain (SGD) transistor comprising a first gate material. At least one memory transistor is in a second vertical hole extending through the memory stack, the at least one memory transistor comprising a second gate material different from the first gate material.

公开(公告)号：US12125699B2

公开(公告)日：2024-10-22

申请号：US17359947

申请日：2021-06-28

Applicant: Applied Materials, Inc.

Inventor： Abhijeet S. Bagal ,  Qian Fu ,  Kuan-Ting Liu ,  Chung Liu

IPC: H01L21/02 ,  H01L21/263

CPC classification number: H01L21/02115 ,  H01L21/02274 ,  H01L21/2636

Abstract: Semiconductor processing methods are described that include providing a substrate to a reaction chamber, where the substrate includes substrate trenches that have a top surface and a bottom surface. A deposition gas that includes a carbon-containing gas and a nitrogen-containing gas flows into a plasma excitation region of the reaction chamber. A deposition plasma having an electron temperature less than or about 4 eV is generated from the deposition gas. The methods further include depositing a carbon-containing layer on the top surface and the bottom surface of the substrate trenches, where the as-deposited carbon-containing layer has a top surface-to-bottom surface thickness ratio of greater than or about 3:1. Also described are semiconductor structures that include an as-deposited carbon-containing layer on the top and bottom surface of at least a first and second trench, where the carbon-containing layer has a top surface-to-bottom surface thickness ratio of greater than or about 3:1.

公开(公告)号：US20240038833A1

公开(公告)日：2024-02-01

申请号：US18222086

申请日：2023-07-14

Applicant: Applied Materials, Inc.

Inventor： Fredrick Fishburn ,  Tomohiko Kitajima ,  Qian Fu ,  Srinivas Guggilla ,  Hang Yu ,  Jun Feng ,  Shih Chung Chen ,  Lakmal C. Kalutarage ,  Jayden Potter ,  Karthik Janakiraman ,  Deenesh Padhi ,  Yifeng Zhou ,  Yufeng Jiang ,  Sung-Kwan Kang

IPC: H10B12/00

CPC classification number: H01L28/91 ,  H01L28/92 ,  H10B12/03 ,  H10B12/30

Abstract: Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2), ammonia (NH3), and combinations thereof.

公开(公告)号：US20230110474A1

公开(公告)日：2023-04-13

申请号：US17500664

申请日：2021-10-13

Applicant: Applied Materials, Inc.

Inventor： Yifeng Zhou ,  Qian Fu

IPC: H01L21/3205 ,  H01L21/3213 ,  C23C16/24

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include one or more patterned features separated by exposed regions of the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor and the hydrogen-containing precursor. Forming the plasma of the silicon-containing precursor and the hydrogen-containing precursor may be performed at a plasma power of less than or about 1,000 W. The methods may include depositing a silicon-containing material on the one or more patterned features along the substrate. The silicon-containing material may be deposited on the patterned features at a rate of at least 2:1 relative to deposition on the exposed regions of the substrate.

公开(公告)号：US20250062131A1

公开(公告)日：2025-02-20

申请号：US18234685

申请日：2023-08-16

Applicant: Applied Materials, Inc.

Inventor： Hanbyul Jin ,  Sangjun Park ,  Menghui Li ,  Xiawan Yang ,  Sunil Srinivasan ,  Meishen Liu ,  Andrew Butler ,  Qian Fu

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

Abstract: Methods of semiconductor processing may include forming plasma effluents of a plurality of precursors (e.g., an etchant precursor, an oxygen-containing precursor, and a silicon-and-fluorine-containing precursor like silicon tetrafluoride). The plasma effluents may then contact a silicon-containing material and a mask material on a substrate in a processing region of a semiconductor processing chamber. The mask material may have one or more apertures therein that allow the plasma effluents access to the silicon-containing material. Contacting the silicon-containing material and the mask material with the plasma effluents may cause (i) etching the silicon-containing material with the plasma effluents to form and/or deepen one or more features in the silicon-containing material and (ii) simultaneously etching the mask material and depositing a silicon-and-oxygen-containing material on the mask material with the plasma effluents.

公开(公告)号：US20240420948A1

公开(公告)日：2024-12-19

申请号：US18816702

申请日：2024-08-27

Applicant: Applied Materials, Inc.

Inventor： Abhijeet S. Bagal ,  Qian Fu ,  Kuan-Ting Liu ,  Chung Liu

IPC: H01L21/02 ,  H01L21/263

Abstract: Semiconductor processing methods are described that include providing a substrate to a reaction chamber, where the substrate includes substrate trenches that have a top surface and a bottom surface. A deposition gas that includes a carbon-containing gas and a nitrogen-containing gas flows into a plasma excitation region of the reaction chamber. A deposition plasma having an electron temperature less than or about 4 eV is generated from the deposition gas. The methods further include depositing a carbon-containing layer on the top surface and the bottom surface of the substrate trenches, where the as-deposited carbon-containing layer has a top surface-to-bottom surface thickness ratio of greater than or about 3:1. Also described are semiconductor structures that include an as-deposited carbon-containing layer on the top and bottom surface of at least a first and second trench, where the carbon-containing layer has a top surface-to-bottom surface thickness ratio of greater than or about 3:1.

公开(公告)号：US20230360920A1

公开(公告)日：2023-11-09

申请号：US17738526

申请日：2022-05-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Yifeng Zhou ,  Qian Fu

IPC: H01L21/3065

CPC classification number: H01L21/3065

Abstract: Described herein is a method for etching a sample. The method includes performing a plasma etch pulse. The plasma etch pulse is performed by directing a gas flow comprising silicon tetrachloride (SiCl4) and a diluent towards the sample. While directing the gas flow, a bias power is applied to achieve a bias state for a first time period. Then, a source power is applied to achieve a source state for a second time period, and then no bias power and no source power is applied to achieve a recovery state for a third time period. The plasma etch pulse is repeated until a target amount of the sample is etched.

公开(公告)号：US20230245895A1

公开(公告)日：2023-08-03

申请号：US17590084

申请日：2022-02-01

Applicant: Applied Materials, Inc.

Inventor： Zhonghua Yao ,  Qian Fu ,  Aaron Eppler ,  Mukund Srinivasan

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01L21/02129 ,  H01L21/02205

Abstract: Exemplary semiconductor processing methods may include depositing a boron-containing material on the substrate. The boron-containing material may extend along sidewalls of the one or more features in the substrate. The methods may include forming a plasma of an oxygen-containing precursor and contacting the substrate with plasma effluents of the oxygen-containing precursor. The contacting may etch a portion of the one or more features in the substrate. The contacting may oxidize the boron-containing material.

公开(公告)号：US20230129550A1

公开(公告)日：2023-04-27

申请号：US17508419

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Abhijeet S. Bagal ,  Qian Fu

IPC: H01L21/02 ,  H01L21/311

Abstract: Exemplary semiconductor processing methods may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may define one or more recessed features. The methods may include providing a second precursor to the processing region. The methods may include forming a plasma of the carbon-containing precursor and the second precursor in the processing region. Forming the plasma of the carbon-containing precursor and the second precursor may be performed at a plasma power of greater than or about 500 W. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more recessed features. The methods may include, subsequent depositing the carbon-containing material for a first period of time, applying a bias power while depositing the carbon-containing material for a second period of time.

公开(公告)号：US20250054770A1

公开(公告)日：2025-02-13

申请号：US18232991

申请日：2023-08-11

Applicant: Applied Materials, Inc.

Inventor： Jiajing Li ,  Mengjie Lyu ,  Menghui Li ,  Xiawan Yang ,  Olivier P. Joubert ,  Susumu Shinohara ,  Qian Fu

IPC: H01L21/311

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of oxygen-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The contacting may etch a feature in the layer of oxygen-containing material. A semiconductor processing chamber operating temperature may be maintained at less than or about 0° C. during the semiconductor processing method.