公开(公告)号：US20240404837A1

公开(公告)日：2024-12-05

申请号：US18203404

申请日：2023-05-30

Applicant: Applied Materials, Inc.

Inventor： Zhiren Luo ,  Jeong Hwan Kim ,  Qian Fu ,  Abhijeet S. Bagal

IPC: H01L21/311 ,  H01J37/32

Abstract: Methods of semiconductor processing may include providing a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed on a substrate support within the processing region. A layer of silicon-and-nitrogen-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the hydrogen-containing precursor. The methods may include contacting the layer of silicon-and-nitrogen-containing material with plasma effluents of the hydrogen-containing precursor. The contacting may etch a portion of the layer of silicon-and-nitrogen-containing material.

公开(公告)号：US20220384189A1

公开(公告)日：2022-12-01

申请号：US17330013

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Siyu Zhu ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Yeonju Kwak ,  Jeong Hwan Kim ,  Qian Fu ,  Xiawan Yang

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/34 ,  C23C16/50 ,  C23C16/458 ,  C23C16/04

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20240014039A1

公开(公告)日：2024-01-11

申请号：US17861691

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Jeong Hwan Kim ,  Yeonju Kwak ,  Qian Fu ,  Siyu Zhu ,  Chuanxi Yang ,  Hang Yu

IPC: H01L21/033

CPC classification number: H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the oxygen-containing precursor to produce oxygen-containing plasma effluents. The methods may include contacting a substrate housed in the processing region with the oxygen-containing plasma effluents. The substrate may include a boron-and-nitrogen-containing material overlying a carbon-containing material. The boron-and-nitrogen-containing material comprises a plurality of openings. The methods may include etching the carbon-containing material.

公开(公告)号：US20240249953A1

公开(公告)日：2024-07-25

申请号：US18098791

申请日：2023-01-19

Applicant: Applied Materials, Inc.

Inventor： Yeonju Kwak ,  Jeong Hwan Kim ,  Qian Fu ,  Siyu Zhu ,  Hang Yu ,  Srinivas Guggilla

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31122 ,  H01J37/32816 ,  H01L21/31144 ,  H10B69/00

Abstract: Exemplary methods of semiconductor processing may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a boron-containing material overlying a carbon-containing material. The methods may include generating plasma effluents of the fluorine-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor. The methods may include removing the boron-containing material from the substrate.

公开(公告)号：US11935751B2

公开(公告)日：2024-03-19

申请号：US17330013

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Siyu Zhu ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Yeonju Kwak ,  Jeong Hwan Kim ,  Qian Fu ,  Xiawan Yang

IPC: H01L21/033 ,  C23C16/04 ,  C23C16/34 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/0337 ,  C23C16/042 ,  C23C16/342 ,  C23C16/4584 ,  C23C16/50 ,  H01J37/32449 ,  H01L21/0332 ,  H01L21/31144 ,  H01J2237/332

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.