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公开(公告)号：US12094748B2
公开(公告)日：2024-09-17
申请号：US17405929
申请日：2021-08-18
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67 , H05B3/22
CPC分类号： H01L21/6833 , H01J37/32357 , H01J37/32724 , H01L21/67196 , H05B3/22 , H01L21/67167
摘要： Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a plurality of apertures. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may include a plurality of substrate support assemblies equal to the number of apertures defined through the lid plate. Each assembly may be disposed in one of the processing regions and may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. Each assembly may include a heater embedded within the chuck body. Each assembly may include bipolar electrodes between the heater and the substrate support surface. Each assembly may include a conductive mesh embedded within the body between the heater and bipolar electrodes.
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公开(公告)号：US11956883B2
公开(公告)日：2024-04-09
申请号：US18088310
申请日：2022-12-23
发明人： Zheng John Ye , Daemian Raj Benjamin Raj , Shailendra Srivastava , Nikhil Sudhindrarao Jorapur , Ndanka O. Mukuti , Dmitry A. Dzilno , Juan Carlos Rocha
CPC分类号： H05H1/46 , H01J37/32128 , H01J37/32165 , H01J37/32183
摘要： A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.
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3.发明授权公开(公告)号：US11823871B2
公开(公告)日：2023-11-21
申请号：US16976569
申请日：2019-03-01
发明人： Jozef Kudela , Tsutomu Tanaka , Alexander V. Garachtchenko , Dmitry A. Dzilno , Avinash Shervegar , Kallol Bera , Xiaopu Li , Anantha K. Subramani , John C. Forster
IPC分类号： C23C16/509 , H01J37/32 , C23C16/455
CPC分类号： H01J37/32211 , C23C16/45536 , H01J37/3244 , H01J37/32348 , H01J37/32541 , H01J2237/332
摘要： Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.
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公开(公告)号：US11705312B2
公开(公告)日：2023-07-18
申请号：US17134280
申请日：2020-12-26
发明人： Tsutomu Tanaka , Jared Ahmad Lee , Rakesh Ramadas , Dmitry A. Dzilno , Gregory J. Wilson , Sriharish Srinivasan
IPC分类号： H01J37/32
CPC分类号： H01J37/32733 , H01J37/3244 , H01J37/32082 , H01J37/32522 , H01J2237/20235 , H01J2237/332
摘要： The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.
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公开(公告)号：US20220208531A1
公开(公告)日：2022-06-30
申请号：US17134280
申请日：2020-12-26
发明人： Tsutomu Tanaka , Jared Ahmad Lee , Rakesh Ramadas , Dmitry A. Dzilno , Gregory J. Wilson , Sriharish Srinivasan
IPC分类号： H01J37/32
摘要： The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.
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公开(公告)号：US11315763B2
公开(公告)日：2022-04-26
申请号：US17009167
申请日：2020-09-01
IPC分类号： H01J37/32
摘要： Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.
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公开(公告)号：US11114282B2
公开(公告)日：2021-09-07
申请号：US16895904
申请日：2020-06-08
摘要： Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.
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公开(公告)号：US10720311B2
公开(公告)日：2020-07-21
申请号：US16669257
申请日：2019-10-30
摘要： Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.
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公开(公告)号：US20190189404A1
公开(公告)日：2019-06-20
申请号：US16220825
申请日：2018-12-14
IPC分类号： H01J37/32
摘要： Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.
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公开(公告)号：US20190189400A1
公开(公告)日：2019-06-20
申请号：US16220833
申请日：2018-12-14
发明人： Kenichi Ohno , Keiichi Tanaka , Li-Qun Xia , Tsutomu Tanaka , Dmitry A. Dzilno , Mario D. Silvetti , John C. Forster , Rakesh Ramadas , Mike Murtagh , Alexander V. Garachtchenko
IPC分类号： H01J37/32 , C23C16/455 , C23C16/507 , C23C16/56
CPC分类号： H01J37/32385 , C23C16/45519 , C23C16/45544 , C23C16/507 , C23C16/56 , H01J37/32091 , H01J37/3244 , H01J37/32568 , H01J2237/332 , H01J2237/3341
摘要： Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.
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