公开(公告)号：US20240068095A1

公开(公告)日：2024-02-29

申请号：US17897452

申请日：2022-08-29

Applicant: Applied Materials, Inc.

Inventor： Youngki Chang ,  Dhritiman Subha Kashyap ,  Rakesh Ramadas ,  Ashutosh Agarwal ,  Shashidhara Patel H B ,  Muhannad Mustafa ,  Sanjeev Baluja

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45589

Abstract: Gas distribution apparatuses described herein include a mixing plate adjacent a back plate of a showerhead. The mixing plate has a back surface and a front surface defining a thickness of the mixing plate. The mixing plate has a mixing channel comprising a top portion and a bottom portion defining a mixing channel length and at least two gas inlets in fluid communication with the top portion of the mixing channel. The gas distribution apparatus also includes a mixer disposed within the thickness of the mixing plate in the top portion of the mixing channel. The mixer has a top plate and a mixer stem extending from the top plate and a plurality of blades positioned along the mixer stem length. Also provided are processing chambers including the gas distribution apparatuses described herein.

公开(公告)号：US20240420924A1

公开(公告)日：2024-12-19

申请号：US18209716

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Amit Sahu ,  Shashidhara Patel H B ,  Muhannad Mustafa ,  Rakesh Ramadas ,  Sanjeev Baluja

IPC: H01J37/32 ,  H01L21/67

Abstract: Cooling flanges and semiconductor manufacturing processing chamber comprising the cooling flanges are disclosed. The cooling flanges comprise a flange body with a gas channel extending through the length thereof. The gas channel has an inlet funnel, a middle channel and an outlet funnel with a purge gas inlet in a side of the flange body. The purge gas inlet connects to the middle channel of the gas channel.

公开(公告)号：US20230307213A1

公开(公告)日：2023-09-28

申请号：US18205690

申请日：2023-06-05

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  Jared Ahmad Lee ,  Rakesh Ramadas ,  Dmitry A. Dzilno ,  Gregory J. Wilson ,  Sriharish Srinivasan

IPC: H01J37/32

CPC classification number: H01J37/32733 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522 ,  H01J2237/20235 ,  H01J2237/332

Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

公开(公告)号：US11823939B2

公开(公告)日：2023-11-21

申请号：US17480985

申请日：2021-09-21

Applicant: Applied Materials, Inc.

Inventor： Kwok Feng Wong ,  Rakesh Ramadas ,  Ashutosh Agarwal

IPC: H01L21/68 ,  G01B11/24 ,  H01L21/687

CPC classification number: H01L21/681 ,  G01B11/24 ,  H01L21/68735

Abstract: Methods for aligning a processing chamber using a centering ring and processing chambers having the centering ring are describes. The method includes determining an average central position for the centering ring based on the concentricity of the centering with the support surfaces and adjusting average position of centering ring to a final position based on the average central position.

公开(公告)号：US12288677B2

公开(公告)日：2025-04-29

申请号：US18205690

申请日：2023-06-05

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  Jared Ahmad Lee ,  Rakesh Ramadas ,  Dmitry A. Dzilno ,  Gregory J. Wilson ,  Sriharish Srinivasan

IPC: H01J37/32

Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

公开(公告)号：US20230089089A1

公开(公告)日：2023-03-23

申请号：US17480985

申请日：2021-09-21

Applicant: Applied Materials, Inc.

Inventor： Kwok Feng Wong ,  Rakesh Ramadas ,  Ashutosh Agarwal

IPC: H01L21/68 ,  H01L21/687 ,  G01B11/24

Abstract: Methods for aligning a processing chamber using a centering ring and processing chambers having the centering ring are describes. The method includes determining an average central position for the centering ring based on the concentricity of the centering with the support surfaces and adjusting average position of centering ring to a final position based on the average central position.

公开(公告)号：US11081318B2

公开(公告)日：2021-08-03

申请号：US16220833

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Kenichi Ohno ,  Keiichi Tanaka ,  Li-Qun Xia ,  Tsutomu Tanaka ,  Dmitry A. Dzilno ,  Mario D. Silvetti ,  John C. Forster ,  Rakesh Ramadas ,  Mike Murtagh ,  Alexander V. Garachtchenko

IPC: H01L21/31 ,  H01J37/32 ,  C23C16/507 ,  C23C16/455 ,  C23C16/56

Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

公开(公告)号：US11705312B2

公开(公告)日：2023-07-18

申请号：US17134280

申请日：2020-12-26

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  Jared Ahmad Lee ,  Rakesh Ramadas ,  Dmitry A. Dzilno ,  Gregory J. Wilson ,  Sriharish Srinivasan

IPC: H01J37/32

CPC classification number: H01J37/32733 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32522 ,  H01J2237/20235 ,  H01J2237/332

Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

公开(公告)号：US20220208531A1

公开(公告)日：2022-06-30

申请号：US17134280

申请日：2020-12-26

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  Jared Ahmad Lee ,  Rakesh Ramadas ,  Dmitry A. Dzilno ,  Gregory J. Wilson ,  Sriharish Srinivasan

IPC: H01J37/32

Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

公开(公告)号：US20190189400A1

公开(公告)日：2019-06-20

申请号：US16220833

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Kenichi Ohno ,  Keiichi Tanaka ,  Li-Qun Xia ,  Tsutomu Tanaka ,  Dmitry A. Dzilno ,  Mario D. Silvetti ,  John C. Forster ,  Rakesh Ramadas ,  Mike Murtagh ,  Alexander V. Garachtchenko

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/507 ,  C23C16/56

CPC classification number: H01J37/32385 ,  C23C16/45519 ,  C23C16/45544 ,  C23C16/507 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/3341

Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.