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公开(公告)号：US20240344608A1
公开(公告)日：2024-10-17
申请号：US18209762
申请日：2023-06-14
发明人： Shashidhara Patel H B , Nagaraj Naik , Muhannad Mustafa , Bin Cao , Sanjeev Baluja , Aditya Chuttar , Jae Hwa Park
CPC分类号： F16J15/002 , F16J15/024
摘要： Sealing bodies comprising a first body having a top surface and a bottom surface defining a thickness thereof. An inlet conduit and an outlet conduit are in fluid communication with one or more of the top surface, the bottom surface, or a top channel formed in the top surface or a bottom channel formed in the bottom surface.
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公开(公告)号：US20230357927A1
公开(公告)日：2023-11-09
申请号：US18224206
申请日：2023-07-20
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/45544 , C23C16/4408
摘要： Process chamber lids having a pumping liner with a showerhead and gas funnel within an open central region are described. The showerhead is spaced a distance from the gas funnel to form a gap and the gas funnel has an opening to provide a flow of gas into the gap. The gas funnel includes a plurality of apertures extending from the front surface to a common region adjacent the back surface of the gas funnel. A purge ring is in contact with the back surface of the gas funnel and aligned so that a circular channel formed in the bottom surface of the purge ring body is positioned adjacent the common area of the apertures in the gas funnel.
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公开(公告)号：US20220389585A1
公开(公告)日：2022-12-08
申请号：US17889930
申请日：2022-08-17
IPC分类号： C23C16/455 , C23C16/52 , C23C16/50
摘要： Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.
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公开(公告)号：US11447866B2
公开(公告)日：2022-09-20
申请号：US17350073
申请日：2021-06-17
IPC分类号： C23C16/40 , C23C16/455 , C23C16/52 , C23C16/50
摘要： Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.
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公开(公告)号：US11420217B2
公开(公告)日：2022-08-23
申请号：US16721724
申请日：2019-12-19
IPC分类号： C23C16/40 , B05B1/18 , B05B1/00 , C23C16/455 , C23C16/458 , H01L21/687
摘要： Embodiments of showerheads for use in a process chamber are provided herein. In some embodiments, a showerhead includes a first spiral channel extending from a central region to a peripheral region of the showerhead; a second spiral channel extending from a central region to a peripheral region of the showerhead, wherein the second spiral channel is interleaved with the first spiral channel and fluidly independent from the first spiral channel; a plurality of first channels extending from the first spiral channel to a plurality of first gas distribution holes on a lower surface of the showerhead, wherein each first channel is a singular channel extending at an angle; and a plurality of second channels extending from the second spiral channel to a plurality of second gas distribution holes on the lower surface of the showerhead, wherein each second channel is a singular channel extending at an angle.
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公开(公告)号：US11415147B2
公开(公告)日：2022-08-16
申请号：US16886088
申请日：2020-05-28
摘要： Pumping liners for process chambers including a first ring-shaped body and a second ring-shaped body are described. The first ring-shaped body has a first plurality of openings and the second ring-shaped body has a second plurality of openings. The first ring-shaped body and the second ring-shaped body are rotatable relative to each other around a central axis to at least partially overlap the first plurality of openings and the second plurality of openings to change the area of conductance through the openings. Methods of removing gases from a processing chamber are also described.
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公开(公告)号：US11186910B2
公开(公告)日：2021-11-30
申请号：US16568612
申请日：2019-09-12
IPC分类号： C23C16/40 , C23C16/455 , H01L21/67 , H01L21/02
摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The delivery channel is separated into a plurality of zones by partitions. Each of the plurality of zones has an inlet and an outlet.
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公开(公告)号：US10704147B2
公开(公告)日：2020-07-07
申请号：US15421964
申请日：2017-02-01
发明人： Muhammad M. Rasheed , Muhannad Mustafa , Hamid Tavassoli , Steven V Sansoni , Cheng-Hsiung Tsai , Vikash Banthia
IPC分类号： C23C16/00 , C23C16/46 , C23C16/458 , H01L21/687 , H01L21/67 , H01L21/683
摘要： Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.
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公开(公告)号：US20240047256A1
公开(公告)日：2024-02-08
申请号：US17879074
申请日：2022-08-02
发明人： Muhannad Mustafa , Sanjeev Baluja
CPC分类号： H01L21/68 , B25B11/005 , H01L21/6838
摘要： Processing chambers, substrate supports, centering wafers and methods of center calibrating wafer hand-off are described. A centering wafer comprises a disc-shaped body having a top surface and a bottom surface defining a thickness, a center, an outer edge having an outer peripheral face, a first arc-shaped slit and a second arc-shaped slit. Embodiments of the disclosure advantageously provide the ability to use the centering wafer to monitor and control backside pressure and thereby determine the center of a substrate support prior to processing the centering wafer. The centering wafer may be centered at a plurality of different angles by rotating the centering wafer.
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公开(公告)号：US20230313378A1
公开(公告)日：2023-10-05
申请号：US17709931
申请日：2022-03-31
发明人： Yongjing Lin , Lei Zhou , Muhannad Mustafa , Shih Chung Chen , Zhihui Liu , Chi-Chou Lin , Bin Cao , Janardhan Devrajan , Mario D. Silvetti , Mandyam Sriram
IPC分类号： C23C16/458 , C23C16/455
CPC分类号： C23C16/4586 , C23C16/45544
摘要： Substrate support, substrate support assemblies and process chambers comprising same are described. The substrate support has a thermally conductive body with a top surface, a bottom surface and an outer edge, and a plurality of long edge purge channel outlet opening at the outer edge of the thermally conductive body. The substrate support is configured to support a substrate to be processed on a top surface of the substrate support. The top surface of the thermally conductive body may have a ceramic coating. Each of the plurality of purge channel outlet is in fluid communication with a long edge purge channel. The long edge purge channel is coated with a long edge purge channel coating. A substrate support assembly includes the substrate support and the support post coupled to the substrate support. The processing chamber include a chamber body and the substrate support within the chamber body.
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