公开(公告)号：US12062545B2

公开(公告)日：2024-08-13

申请号：US17339454

申请日：2021-06-04

Applicant: Applied Materials, Inc.

Inventor： Ilanit Fisher ,  Chi-Chou Lin ,  Kedi Wu ,  Wen Ting Chen ,  Shih Chung Chen ,  Srinivas Gandikota ,  Mandyam Sriram ,  Chenfei Shen ,  Naomi Yoshida ,  He Ren

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/28568 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45553 ,  H01L21/02068

Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

公开(公告)号：US20230313378A1

公开(公告)日：2023-10-05

申请号：US17709931

申请日：2022-03-31

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Lei Zhou ,  Muhannad Mustafa ,  Shih Chung Chen ,  Zhihui Liu ,  Chi-Chou Lin ,  Bin Cao ,  Janardhan Devrajan ,  Mario D. Silvetti ,  Mandyam Sriram

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4586 ,  C23C16/45544

Abstract: Substrate support, substrate support assemblies and process chambers comprising same are described. The substrate support has a thermally conductive body with a top surface, a bottom surface and an outer edge, and a plurality of long edge purge channel outlet opening at the outer edge of the thermally conductive body. The substrate support is configured to support a substrate to be processed on a top surface of the substrate support. The top surface of the thermally conductive body may have a ceramic coating. Each of the plurality of purge channel outlet is in fluid communication with a long edge purge channel. The long edge purge channel is coated with a long edge purge channel coating. A substrate support assembly includes the substrate support and the support post coupled to the substrate support. The processing chamber include a chamber body and the substrate support within the chamber body.

公开(公告)号：US20230113514A1

公开(公告)日：2023-04-13

申请号：US17541702

申请日：2021-12-03

Applicant: Applied Materials, Inc.

Inventor： Shih Chung Chen ,  Yongjing Lin ,  Chi-Chou Lin ,  Zhiyong Wang ,  Chih-Hsun Hsu ,  Mandyam Sriram ,  Tza-Jing Gung

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02

Abstract: Processing methods described herein comprise forming a metal gate film on a narrow feature and a wide feature and depositing a hard mask on the metal gate film. The hard mask forms on the metal gate film at a top, bottom and sidewalls of the wide feature and on a top of the narrow feature to cover the metal gate film. Some processing methods comprise oxidizing the metal gate film on the narrow feature to convert a portion of the metal gate film to a metal oxide film. Some processing methods comprise etching the metal oxide film from the narrow feature to leave a gradient etch profile. Some processing methods comprise filling the narrow feature and the wide feature with a gap fill material comprising one or more of a metal nitride, titanium nitride (TiN) or titanium oxynitride (TiON), the gap fill material substantially free of seams and voids.

公开(公告)号：US11581213B2

公开(公告)日：2023-02-14

申请号：US17029648

申请日：2020-09-23

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Vijayabhaskara Venkatagiriyappa ,  Mihaela A. Balseanu ,  Jyoti Prakash Deo ,  Srinivas Ramakrishna ,  Keiichi Tanaka ,  Mandyam Sriram ,  Francis Kanyiri Mungai ,  Mario D. Silvetti ,  Sriharish Srinivasan

IPC: H01L21/683 ,  H01L21/687 ,  C23C16/458

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

公开(公告)号：US11552177B2

公开(公告)日：2023-01-10

申请号：US17013161

申请日：2020-09-04

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Steven C. H. Hung ,  Mandyam Sriram ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Yang

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/40 ,  H01L21/28 ,  H01L21/285

Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 Å to less than or equal to 50 Å. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-κ metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

公开(公告)号：US20220367236A1

公开(公告)日：2022-11-17

申请号：US17497881

申请日：2021-10-08

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Yongjing Lin ,  Satish Radhakrishnan ,  Haoyan Sha ,  Shih Chung Chen ,  Mario D. Silvetti ,  Mandyam Sriram ,  Vijay D. Parkhe

IPC: H01L21/687 ,  H01L21/683 ,  C23C16/458 ,  C23C16/46

Abstract: Some embodiments of the disclosure relate to methods of modifying a heater pedestal to improve temperature and thickness uniformity. Some embodiments of the disclosure relate to the modified heater pedestals with improved temperature and thickness uniformity. In some embodiments, the height of support mesas in different regions of the pedestal are modified to increase temperature uniformity. In some embodiments, the heater elements are moved above the vacuum channel and purge channel to increase temperature uniformity. In some embodiments, the edge ring is modified to be coplanar with the top of a supported substrate.

公开(公告)号：US20220359532A1

公开(公告)日：2022-11-10

申请号：US17308577

申请日：2021-05-05

Applicant: Applied Materials, Inc.

Inventor： Yong Yang ,  Kunal Bhatnagar ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Jose Alexandro Romero ,  Mandyam Sriram ,  Mohith Verghese ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC: H01L27/108 ,  C23C16/42 ,  C23C16/455

Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

公开(公告)号：US20220162748A1

公开(公告)日：2022-05-26

申请号：US17666881

申请日：2022-02-08

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kevin Griffin ,  Mandyam Sriram

IPC: C23C16/455

Abstract: Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.

公开(公告)号：US20210305052A1

公开(公告)日：2021-09-30

申请号：US17347070

申请日：2021-06-14

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Jospeh Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/28 ,  C23C16/14 ,  C23C16/452 ,  C23C16/458

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

公开(公告)号：US20190131167A1

公开(公告)日：2019-05-02

申请号：US16171785

申请日：2018-10-26

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Mandyam Sriram

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/683 ,  H01L21/67

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.