公开(公告)号：US12062545B2

公开(公告)日：2024-08-13

申请号：US17339454

申请日：2021-06-04

申请人： Applied Materials, Inc.

发明人： Ilanit Fisher ,  Chi-Chou Lin ,  Kedi Wu ,  Wen Ting Chen ,  Shih Chung Chen ,  Srinivas Gandikota ,  Mandyam Sriram ,  Chenfei Shen ,  Naomi Yoshida ,  He Ren

IPC分类号： H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  H01L21/02

CPC分类号： H01L21/28568 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45553 ,  H01L21/02068

摘要： Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

公开(公告)号：US11955382B2

公开(公告)日：2024-04-09

申请号：US17110818

申请日：2020-12-03

申请人： Applied Materials, Inc.

发明人： Kevin Kashefi ,  Alexander Jansen ,  Mehul Naik ,  He Ren ,  Lu Chen ,  Feng Chen

IPC分类号： H01L21/76 ,  H01L21/67 ,  H01L21/768 ,  H01L21/687

CPC分类号： H01L21/76885 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76829 ,  H01L21/76883 ,  H01L21/68707

摘要： Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.

公开(公告)号：US11830725B2

公开(公告)日：2023-11-28

申请号：US17153450

申请日：2021-01-20

申请人： Applied Materials, Inc.

发明人： Naomi Yoshida ,  He Ren ,  Hao Jiang ,  Chenfei Shen ,  Chi-Chou Lin ,  Hao Chen ,  Xuesong Lu ,  Mehul B. Naik

IPC分类号： H01L21/02 ,  H01L21/28 ,  B08B5/02 ,  H01L29/66 ,  H01L21/3205

CPC分类号： H01L21/02057 ,  B08B5/02 ,  H01L21/28026 ,  H01L21/32051 ,  H01L29/66795

摘要： Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of depositing a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of the structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.

公开(公告)号：US11615984B2

公开(公告)日：2023-03-28

申请号：US16848784

申请日：2020-04-14

申请人： APPLIED MATERIALS, INC.

发明人： Shi You ,  He Ren ,  Naomi Yoshida ,  Nikolaos Bekiaris ,  Mehul Naik ,  Martin Jay Seamons ,  Jingmei Liang ,  Mei-Yee Shek

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/67

摘要： Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material.

公开(公告)号：US20220270871A1

公开(公告)日：2022-08-25

申请号：US17742712

申请日：2022-05-12

申请人： Applied Materials, Inc.

发明人： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/768

摘要： Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US10692734B2

公开(公告)日：2020-06-23

申请号：US16171053

申请日：2018-10-25

申请人： APPLIED MATERIALS, INC.

发明人： Jong Mun Kim ,  Chentsau Chris Ying ,  He Ren ,  Srinivas D. Nemani ,  Ellie Yieh

IPC分类号： H01L23/52 ,  H01L21/3213 ,  H01L23/532

摘要： Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.

公开(公告)号：US20170011887A1

公开(公告)日：2017-01-12

申请号：US15273645

申请日：2016-09-22

申请人： Applied Materials, Inc.

发明人： Subhash Deshmukh ,  Jingjing Liu ,  He Ren

IPC分类号： H01J37/32 ,  C23F4/00

CPC分类号： H01J37/32155 ,  C23F4/00 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32431 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3065 ,  H01L21/67115

摘要： The invention includes generating a plasma from a process gas for etching copper on a substrate; providing DC bias pulses to the substrate; exposing at least one of the plasma and the substrate to UV light while the DC bias pulses are provided to the substrate. Numerous other aspects are provided.

摘要翻译： 本发明包括从用于在基板上蚀刻铜的工艺气体产生等离子体; 向衬底提供DC偏置脉冲; 将等离子体和衬底中的至少一个暴露于UV光，同时将DC偏置脉冲提供给衬底。 提供了许多其他方面。

公开(公告)号：US20160254181A1

公开(公告)日：2016-09-01

申请号：US14634512

申请日：2015-02-27

申请人： Applied Materials, Inc.

发明人： Deenesh Padhi ,  Srinivas Guggilla ,  Alexandros T. Demos ,  Bhaskar Kumar ,  He Ren ,  Priyanka Dash

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/76813 ,  H01L21/02458 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76862 ,  H01L23/53295

摘要： A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.

摘要翻译： 描述了在电介质层中形成特征的方法。 通孔，沟槽或双镶嵌结构可能在沉积保形氮化铝层之前存在于电介质层中。 保形氮化铝层被配置为用作屏障以防止穿过屏障的扩散。 形成氮化铝层的方法涉及交替暴露于两种前体处理（如ALD）以实现高共形性。 氮化铝阻挡层的高共形度使得能够减小厚度，并且随后的间隙填充金属层的有效导电性增加。

公开(公告)号：US20150099369A1

公开(公告)日：2015-04-09

申请号：US14290861

申请日：2014-05-29

申请人： Applied Materials, Inc.

发明人： Subhash Deshmukh ,  Joseph Johnson ,  Jingjing Liu ,  He Ren

IPC分类号： H01L21/3213 ,  H01L21/268

CPC分类号： H01L21/3065 ,  C23F4/00 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32862 ,  H01J2237/3343 ,  H01L21/02071 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32136 ,  H05K3/027

摘要： An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.

摘要翻译： 一种被配置为从衬底的表面和从衬底处理室的内部去除金属蚀刻副产物的装置。 将等离子体与固态光源（例如LED）组合使用以解吸金属蚀刻副产物。 然后可以从室中除去解吸的副产物。

公开(公告)号：US20140273487A1

公开(公告)日：2014-09-18

申请号：US14200779

申请日：2014-03-07

申请人： Applied Materials, Inc.

发明人： Subhash Deshmukh ,  He Ren ,  Jingjing Liu

IPC分类号： H01L21/3065 ,  H01L21/67

CPC分类号： H01J37/32146 ,  H01J37/32091 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/68742 ,  H01L21/6875

摘要： In one aspect, a plasma etching apparatus is disclosed. The plasma etching apparatus includes a chamber body having a process chamber adapted to receive a substrate, an RF source coupled to an RF electrode, a pedestal located in the processing chamber and adapted to support a substrate, a plurality of conductive pins adapted to contact and support the substrate during processing, and a DC bias source electrically coupled to the plurality of conductive pins. Etching methods are provided, as are numerous other aspects.

摘要翻译： 一方面，公开了一种等离子体蚀刻装置。 等离子体蚀刻装置包括具有适于接纳基板的处理室的室主体，耦合到RF电极的RF源，位于处理室中的基座，并适于支撑基板，多个导电引脚适于接触和 在处理期间支撑衬底，以及电耦合到多个导电引脚的DC偏压源。 提供了蚀刻方法，以及许多其它方面。