公开(公告)号：US20240258103A1

公开(公告)日：2024-08-01

申请号：US18422656

申请日：2024-01-25

申请人： Applied Materials, Inc.

发明人： Jiajie Cen ,  Ge Qu ,  Shinjae Hwang ,  Zheng Ju ,  Yang Zhou ,  Zhiyuan Wu ,  Feng Chen ,  Kevin Kashefi

IPC分类号： H01L21/02 ,  H01L21/768

CPC分类号： H01L21/02274 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

摘要： Embodiments of the disclosure relate to methods for forming electrical interconnects. Additional embodiments provide methods of forming and treating barrier and liner layers to improve film and material properties. In some embodiments, the resulting composite layers provide improved resistivity, decrease void formation and improve device reliability.

公开(公告)号：US11939666B2

公开(公告)日：2024-03-26

申请号：US16889017

申请日：2020-06-01

申请人： APPLIED MATERIALS, INC.

发明人： Xiangjin Xie ,  Carmen Leal Cervantes ,  Feng Chen ,  Lu Chen ,  Wenjing Xu ,  Aravind Kamath ,  Cheng-Hsiung Matthew Tsai ,  Tae Hong Ha ,  Alexander Jansen ,  Xianmin Tang

IPC分类号： C23C16/56 ,  C23C14/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC分类号： C23C14/564 ,  H01J37/32082 ,  H01L21/02043 ,  H01L21/67017 ,  H01J2237/022

摘要： Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20240006235A1

公开(公告)日：2024-01-04

申请号：US18217110

申请日：2023-06-30

申请人： Applied Materials, Inc.

发明人： Jiajie Cen ,  Zheng Ju ,  Feng Chen ,  Jeffrey W. Antis ,  Bengamin Schmiege

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76858 ,  H01L21/76846 ,  H01L23/53238 ,  H01L23/53223 ,  H01L23/53266

摘要： Described are methods for forming ruthenium doped niobium nitride barrier layers. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å. In some embodiments, the doped barrier layers disclosed herein provide improved barrier properties including a lower nitrogen content, a higher ruthenium content, better coverage, thinner layers, or lower line resistance

公开(公告)号：US11784127B2

公开(公告)日：2023-10-10

申请号：US17858274

申请日：2022-07-06

申请人： Applied Materials, Inc.

发明人： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76849 ,  H01L23/5226

摘要： Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US11164780B2

公开(公告)日：2021-11-02

申请号：US16435121

申请日：2019-06-07

申请人： APPLIED MATERIALS, INC.

发明人： Shi You ,  He Ren ,  Mehul Naik ,  Yi Xu ,  Feng Chen

IPC分类号： H01L21/768 ,  H01L21/311 ,  H01L21/02

摘要： Methods and apparatus for an interconnect formed on a substrate and a method of forming the interconnect thereon. In embodiments, the methods include etching through a hard mask disposed atop a low-k dielectric layer to form a via through the low-k dielectric layer and expose a conductive surface; contacting the conductive surface with dilute hydrofluoric acid to remove contaminants therefrom; removing the hard mask disposed atop the low-k dielectric layer; and applying a remote hydrogen plasma to the conductive surface to form an exposed portion of the conductive surface.

公开(公告)号：US11764157B2

公开(公告)日：2023-09-19

申请号：US17383361

申请日：2021-07-22

申请人： Applied Materials, Inc.

发明人： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76849 ,  H01L23/5226

摘要： Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US20230253248A1

公开(公告)日：2023-08-10

申请号：US18119080

申请日：2023-03-08

申请人： Applied Materials, Inc.

发明人： Yang Zhou ,  Yong Jin Kim ,  Ge Qu ,  Zhiyuan Wu ,  Carmen Leal Cervantes ,  Feng Chen ,  Kevin Kashefi ,  Bhaskar Jyoti Bhuyan ,  Drew Phillips ,  Aaron Dangerfield

IPC分类号： H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76844 ,  H01L21/76846 ,  H01L23/5226 ,  H01L21/28568

摘要： Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C≡C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R′C═CR″, wherein R′ and R″ independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

公开(公告)号：US20230121513A1

公开(公告)日：2023-04-20

申请号：US18068469

申请日：2022-12-19

申请人： APPLIED MATERIALS, INC.

发明人： Kartik B. Shah ,  Satish Radhakrishnan ,  Karthik Ramanathan ,  Karthikeyan Balaraman ,  Adolph Miller Allen ,  Xinyuan Chong ,  Mitrabhanu Sahu ,  Wenjing Xu ,  Michael Sterling Jackson ,  Weize Hu ,  Feng Chen

IPC分类号： G05B13/02 ,  G05B13/04

摘要： Process recipe data associated a process to be performed for a substrate at a process chamber is provided as input to a trained machine learning model. A set of process recipe settings for the process that minimizes scratching on one or more surfaces of the substrate is determined based on one or more outputs of the machine learning model. The process is performed for the substrate at the process chamber in accordance with the determined set of process recipe settings.

公开(公告)号：US20220344275A1

公开(公告)日：2022-10-27

申请号：US17858274

申请日：2022-07-06

申请人： Applied Materials, Inc.

发明人： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/768

摘要： Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US20220108917A1

公开(公告)日：2022-04-07

申请号：US17487123

申请日：2021-09-28

申请人： Applied Materials, Inc.

发明人： Roey Shaviv ,  Suketu Arun Parikh ,  Feng Chen ,  Lu Chen

IPC分类号： H01L21/768 ,  H01L21/02

摘要： Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.