公开(公告)号：US20230070489A1

公开(公告)日：2023-03-09

申请号：US17845356

申请日：2022-06-21

申请人： Applied Materials, Inc.

发明人： Michael Haverty ,  Lu Chen ,  Muthukumar Kaliappan

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L21/285

摘要： Described are microelectronic devices and methods for forming interconnections in microelectronic devices. Embodiments of microelectronic devices include tantalum-containing barrier films comprising an alloy of tantalum and a metal dopant selected from the group consisting of ruthenium (Ru), osmium (Os), palladium (Pd), platinum (Pt), and iridium (Ir).

公开(公告)号：US11410881B2

公开(公告)日：2022-08-09

申请号：US16914416

申请日：2020-06-28

申请人： Applied Materials, Inc.

发明人： Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen

IPC分类号： H01L21/44 ,  H01L21/768 ,  C23C16/455 ,  C23C16/34

摘要： Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：US11270911B2

公开(公告)日：2022-03-08

申请号：US16867990

申请日：2020-05-06

申请人： Applied Materials, Inc.

发明人： Lu Chen ,  Christina L. Engler ,  Gang Shen ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang

IPC分类号： H01L21/768

摘要： Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.

公开(公告)号：US20210407853A1

公开(公告)日：2021-12-30

申请号：US16914416

申请日：2020-06-28

申请人： Applied Materials, Inc.

发明人： Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen

IPC分类号： H01L21/768 ,  C23C16/34 ,  C23C16/455

摘要： Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：US20220181204A1

公开(公告)日：2022-06-09

申请号：US17110818

申请日：2020-12-03

申请人： Applied Materials, Inc.

发明人： Kevin Kashefi ,  Alexander Jansen ,  Mehul Naik ,  He Ren ,  Lu Chen ,  Feng Chen

IPC分类号： H01L21/768 ,  H01L21/67

摘要： Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.

公开(公告)号：US20210351072A1

公开(公告)日：2021-11-11

申请号：US16867990

申请日：2020-05-06

申请人： Applied Materials, Inc.

发明人： Lu Chen ,  Christina L. Engler ,  Gang Shen ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang

IPC分类号： H01L21/768

摘要： Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.

公开(公告)号：US20210269916A1

公开(公告)日：2021-09-02

申请号：US16803963

申请日：2020-02-27

申请人： Applied Materials, Inc.

发明人： Christina L. Engler ,  Lu Chen

IPC分类号： C23C16/34 ,  H01L21/285 ,  H01J37/32 ,  C23C16/455

摘要： Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.

公开(公告)号：US11939666B2

公开(公告)日：2024-03-26

申请号：US16889017

申请日：2020-06-01

申请人： APPLIED MATERIALS, INC.

发明人： Xiangjin Xie ,  Carmen Leal Cervantes ,  Feng Chen ,  Lu Chen ,  Wenjing Xu ,  Aravind Kamath ,  Cheng-Hsiung Matthew Tsai ,  Tae Hong Ha ,  Alexander Jansen ,  Xianmin Tang

IPC分类号： C23C16/56 ,  C23C14/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC分类号： C23C14/564 ,  H01J37/32082 ,  H01L21/02043 ,  H01L21/67017 ,  H01J2237/022

摘要： Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US11784127B2

公开(公告)日：2023-10-10

申请号：US17858274

申请日：2022-07-06

申请人： Applied Materials, Inc.

发明人： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76849 ,  H01L23/5226

摘要： Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US11955382B2

公开(公告)日：2024-04-09

申请号：US17110818

申请日：2020-12-03

申请人： Applied Materials, Inc.

发明人： Kevin Kashefi ,  Alexander Jansen ,  Mehul Naik ,  He Ren ,  Lu Chen ,  Feng Chen

IPC分类号： H01L21/76 ,  H01L21/67 ,  H01L21/768 ,  H01L21/687

CPC分类号： H01L21/76885 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76829 ,  H01L21/76883 ,  H01L21/68707

摘要： Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.