公开(公告)号：US11270911B2

公开(公告)日：2022-03-08

申请号：US16867990

申请日：2020-05-06

申请人： Applied Materials, Inc.

发明人： Lu Chen ,  Christina L. Engler ,  Gang Shen ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang

IPC分类号： H01L21/768

摘要： Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.

公开(公告)号：US11566324B2

公开(公告)日：2023-01-31

申请号：US16803963

申请日：2020-02-27

申请人： Applied Materials, Inc.

发明人： Christina L. Engler ,  Lu Chen

IPC分类号： C23C16/34 ,  H01L21/285 ,  C23C16/455 ,  H01J37/32

摘要： Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.

公开(公告)号：US20230139267A1

公开(公告)日：2023-05-04

申请号：US18145191

申请日：2022-12-22

申请人： Applied Materials, Inc.

发明人： Christina L. Engler ,  Lu Chen

IPC分类号： C23C16/34 ,  H01L21/285 ,  C23C16/455 ,  H01J37/32

摘要： Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.

公开(公告)号：US20210351072A1

公开(公告)日：2021-11-11

申请号：US16867990

申请日：2020-05-06

申请人： Applied Materials, Inc.

发明人： Lu Chen ,  Christina L. Engler ,  Gang Shen ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang

IPC分类号： H01L21/768

摘要： Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.

公开(公告)号：US20210269916A1

公开(公告)日：2021-09-02

申请号：US16803963

申请日：2020-02-27

申请人： Applied Materials, Inc.

发明人： Christina L. Engler ,  Lu Chen

IPC分类号： C23C16/34 ,  H01L21/285 ,  H01J37/32 ,  C23C16/455

摘要： Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.