公开(公告)号：US11990319B2

公开(公告)日：2024-05-21

申请号：US17568836

申请日：2022-01-05

申请人： Applied Materials, Inc.

发明人： Yida Lin ,  Rui Li ,  Martin Lee Riker ,  Haitao Wang ,  Noufal Kappachali ,  Xiangjin Xie

IPC分类号： H01J37/32 ,  B23K15/00

CPC分类号： H01J37/32183 ,  B23K15/0006 ,  H01J2237/327

摘要： Methods and apparatus for processing a substrate are provided herein. For example, an RF power delivery compensation circuit comprises a first input configured to receive an RF forward power from an RF power source connected to a processing chamber and a second input configured to receive an RF delivered power from a matching network connected between the RF power source and the processing chamber. The RF power delivery compensation circuit calculates an RF forward power compensation factor based on the RF forward power and the RF delivered power for adjusting the RF forward power delivered to the processing chamber during operation.

公开(公告)号：US11562925B2

公开(公告)日：2023-01-24

申请号：US17036038

申请日：2020-09-29

申请人： Applied Materials, Inc.

发明人： Shirish Pethe ,  Fuhong Zhang ,  Joung Joo Lee ,  Rui Li ,  Xiangjin Xie ,  Xianmin Tang

IPC分类号： H01L21/768 ,  H01L21/3215 ,  H01L21/3213

摘要： Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.

公开(公告)号：US11289329B2

公开(公告)日：2022-03-29

申请号：US16752630

申请日：2020-01-25

申请人： APPLIED MATERIALS, INC.

发明人： Rui Li ,  Xiangjin Xie ,  Fuhong Zhang ,  Shirish Pethe ,  Adolph Allen ,  Lanlan Zhong ,  Xianmin Tang

IPC分类号： H01L21/02 ,  H01L21/768 ,  C23C14/34 ,  C23C18/38

摘要： Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.

公开(公告)号：US20220293392A1

公开(公告)日：2022-09-15

申请号：US17687157

申请日：2022-03-04

申请人： Applied Materials, Inc.

发明人： Rui Li ,  Andrew Tomko ,  Xiangjin Xie ,  Goichi Yoshidome

IPC分类号： H01J37/32 ,  H05H1/46 ,  H01J37/34

摘要： Embodiments of coils for use in process chambers are provided herein. In some embodiments, a coil for use in a process chamber includes: a coil body having a first end portion and an opposing second end portion coupled to the first end portion via a central portion, the coil body having an annular shape with the first end portion and the second end portion disposed adjacent to each other and spaced apart by a gap forming a discontinuity in the annular shape, wherein at least one of the first end portion and the second end portion have a height that is greater than a height of the central portion; and a plurality of hubs coupled to an outer sidewall of the coil body and configured to facilitate coupling the coil to the process chamber, wherein a hub of the plurality of hubs is coupled to each of the first end portion and the second end portion and configured to couple the coil to a power source.

公开(公告)号：US11410881B2

公开(公告)日：2022-08-09

申请号：US16914416

申请日：2020-06-28

申请人： Applied Materials, Inc.

发明人： Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen

IPC分类号： H01L21/44 ,  H01L21/768 ,  C23C16/455 ,  C23C16/34

摘要： Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：US20210407853A1

公开(公告)日：2021-12-30

申请号：US16914416

申请日：2020-06-28

申请人： Applied Materials, Inc.

发明人： Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen

IPC分类号： H01L21/768 ,  C23C16/34 ,  C23C16/455

摘要： Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：US11527437B2

公开(公告)日：2022-12-13

申请号：US17022058

申请日：2020-09-15

申请人： APPLIED MATERIALS, INC.

发明人： Lanlan Zhong ,  Fuhong Zhang ,  Gang Shen ,  Feng Chen ,  Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang

IPC分类号： H01L21/768 ,  G11B5/31 ,  C23C16/455

摘要： Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

公开(公告)号：US20220328348A1

公开(公告)日：2022-10-13

申请号：US17853150

申请日：2022-06-29

申请人： Applied Materials, Inc.

发明人： Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen

IPC分类号： H01L21/768 ,  C23C16/455 ,  C23C16/34

摘要： Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：US20190385908A1

公开(公告)日：2019-12-19

申请号：US16442941

申请日：2019-06-17

申请人： Applied Materials, Inc.

发明人： Xiangjin Xie ,  Rui Li ,  Goichi Yoshidome ,  Adolph M. Allen ,  Xianmin Tang

IPC分类号： H01L21/768 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/3205

摘要： Methods of treating a film on a substrate in a PVD chamber are described. The methods include biasing the substrate with an RF power to provide a biased substrate, etching the film on the biased substrate with at least one gas, and sputtering first and second sources of cobalt onto the film on the biased substrate to form a doped film. Some embodiments advantageously provide doped films as liners or barrier layers. Some embodiments provide for the deposition of bulk materials on the doped films. Some embodiments advantageously minimize the thickness of the individual layers.