公开(公告)号：US20190115254A1

公开(公告)日：2019-04-18

申请号：US16159128

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Ben-Li Sheu ,  Feng Q. Liu ,  Tae Hong Ha ,  Mei Chang ,  Shirish Pethe

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

Abstract: Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

公开(公告)号：US11948885B2

公开(公告)日：2024-04-02

申请号：US17356717

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Suketu A. Parikh ,  Rong Tao ,  Roey Shaviv ,  Joung Joo Lee ,  Seshadri Ganguli ,  Shirish Pethe ,  David Gage ,  Jianshe Tang ,  Michael A Stolfi

IPC: H01L23/528 ,  H01L21/02 ,  H01L21/321 ,  H01L21/67 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/02063 ,  H01L21/32125 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

公开(公告)号：US11562925B2

公开(公告)日：2023-01-24

申请号：US17036038

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Shirish Pethe ,  Fuhong Zhang ,  Joung Joo Lee ,  Rui Li ,  Xiangjin Xie ,  Xianmin Tang

IPC: H01L21/768 ,  H01L21/3215 ,  H01L21/3213

Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.

公开(公告)号：US11289329B2

公开(公告)日：2022-03-29

申请号：US16752630

申请日：2020-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Rui Li ,  Xiangjin Xie ,  Fuhong Zhang ,  Shirish Pethe ,  Adolph Allen ,  Lanlan Zhong ,  Xianmin Tang

IPC: H01L21/02 ,  H01L21/768 ,  C23C14/34 ,  C23C18/38

Abstract: Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.

公开(公告)号：US11075165B2

公开(公告)日：2021-07-27

申请号：US16516817

申请日：2019-07-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Suketu A Parikh ,  Rong Tao ,  Roey Shaviv ,  Joung Joo Lee ,  Seshadri Ganguli ,  Shirish Pethe ,  David Gage ,  Jianshe Tang ,  Michael A Stolfi

IPC: H01L23/52 ,  H01L23/528 ,  H01L21/67 ,  H01L23/532 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.

公开(公告)号：US10892186B2

公开(公告)日：2021-01-12

申请号：US16159128

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Ben-Li Sheu ,  Feng Q. Liu ,  Tae Hong Ha ,  Mei Chang ,  Shirish Pethe

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/44 ,  C23C14/34 ,  C23C16/04 ,  C23C14/04 ,  C23C14/02 ,  C23C16/18 ,  C23C14/14

Abstract: Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.