Invention Grant
- Patent Title: Method of depositing multilayer stack including copper over features of a device structure
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Application No.: US17036038Application Date: 2020-09-29
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Publication No.: US11562925B2Publication Date: 2023-01-24
- Inventor: Shirish Pethe , Fuhong Zhang , Joung Joo Lee , Rui Li , Xiangjin Xie , Xianmin Tang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/3215 ; H01L21/3213

Abstract:
Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.
Public/Granted literature
- US20210118729A1 METHOD OF DEPOSITING LAYERS Public/Granted day:2021-04-22
Information query
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