公开(公告)号：US20190088540A1

公开(公告)日：2019-03-21

申请号：US15711169

申请日：2017-09-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenting Hou ,  Jianxin Lei ,  Joung Joo Lee ,  Rong Tao

IPC: H01L21/768 ,  C23C16/06 ,  C23C14/14

Abstract: Methods and apparatus for filling features with cobalt are provided herein. In some embodiments, a method for processing a substrate includes: depositing a first cobalt layer via a chemical vapor deposition (CVD) process atop a substrate and within a feature disposed in the substrate; and at least partially filling the feature with cobalt or cobalt containing material by performing a plasma process in a physical vapor deposition (PVD) chamber having a cobalt target to reflow a portion of the first cobalt layer into the feature. The PVD chamber may be configured to simultaneously deposit cobalt or cobalt containing material within the feature from a cobalt target disposed in the PVD chamber.

公开(公告)号：US11948885B2

公开(公告)日：2024-04-02

申请号：US17356717

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Suketu A. Parikh ,  Rong Tao ,  Roey Shaviv ,  Joung Joo Lee ,  Seshadri Ganguli ,  Shirish Pethe ,  David Gage ,  Jianshe Tang ,  Michael A Stolfi

IPC: H01L23/528 ,  H01L21/02 ,  H01L21/321 ,  H01L21/67 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/02063 ,  H01L21/32125 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

公开(公告)号：US10304732B2

公开(公告)日：2019-05-28

申请号：US15711169

申请日：2017-09-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenting Hou ,  Jianxin Lei ,  Joung Joo Lee ,  Rong Tao

IPC: H01L21/768 ,  H01L21/67 ,  C23C14/14 ,  C23C16/06 ,  H01L21/285 ,  H01L21/02 ,  H01L23/532

Abstract: Methods and apparatus for filling features with cobalt are provided herein. In some embodiments, a method for processing a substrate includes: depositing a first cobalt layer via a chemical vapor deposition (CVD) process atop a substrate and within a feature disposed in the substrate; and at least partially filling the feature with cobalt or cobalt containing material by performing a plasma process in a physical vapor deposition (PVD) chamber having a cobalt target to reflow a portion of the first cobalt layer into the feature. The PVD chamber may be configured to simultaneously deposit cobalt or cobalt containing material within the feature from a cobalt target disposed in the PVD chamber.

公开(公告)号：US10014179B2

公开(公告)日：2018-07-03

申请号：US15019587

申请日：2016-02-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Rong Tao ,  Tae Hong Ha ,  Xianmin Tang ,  Joung Joo Lee

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/28556 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53257

Abstract: Methods for processing a substrate include: (a) depositing a cobalt layer to a first thickness within a first plurality of features and a second plurality of features formed in a substrate, wherein each of the first plurality of features and each of the second plurality of features comprises an opening, and wherein a width of the openings of the first plurality of features is less than a width of the openings of the second plurality of features; and (b) heating the substrate to a first temperature to fill the first plurality of features with cobalt material while simultaneously depositing a fill material on the substrate to fill the second plurality of features.

公开(公告)号：US10047430B2

公开(公告)日：2018-08-14

申请号：US14205260

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/04 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

公开(公告)号：US20220223472A1

公开(公告)日：2022-07-14

申请号：US17145520

申请日：2021-01-11

Applicant: Applied Materials, Inc.

Inventor： Yi Luo ,  Rong Tao ,  Liqi Wu ,  Mingte Liu ,  Joung Joo Lee ,  Avgerinos V. Gelatos

IPC: H01L21/768

Abstract: A method for forming conductive structures for a semiconductor device includes depositing a reflow material in features, e.g. vias, formed in a dielectric layer. A high melting point material is deposited in the feature and is reflowed and annealed in an ambient comprising one or more of hydrogen molecules, hydrogen ions, and hydrogen radicals at a temperature greater than 300° C. to fill the feature with a reflow material.

公开(公告)号：US11075165B2

公开(公告)日：2021-07-27

申请号：US16516817

申请日：2019-07-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Suketu A Parikh ,  Rong Tao ,  Roey Shaviv ,  Joung Joo Lee ,  Seshadri Ganguli ,  Shirish Pethe ,  David Gage ,  Jianshe Tang ,  Michael A Stolfi

IPC: H01L23/52 ,  H01L23/528 ,  H01L21/67 ,  H01L23/532 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.