公开(公告)号：US10008412B2

公开(公告)日：2018-06-26

申请号：US15601525

申请日：2017-05-22

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L21/76856 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76841 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

公开(公告)号：US20170256448A1

公开(公告)日：2017-09-07

申请号：US15601525

申请日：2017-05-22

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L21/76856 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76841 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

公开(公告)号：US10665542B2

公开(公告)日：2020-05-26

申请号：US15960440

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/76 ,  H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  C23C16/34 ,  C23C16/455

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

公开(公告)号：US09916975B2

公开(公告)日：2018-03-13

申请号：US14919149

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C23C16/00 ,  H01L21/02 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34

CPC classification number: H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US20210159118A1

公开(公告)日：2021-05-27

申请号：US17143594

申请日：2021-01-07

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

公开(公告)号：US10431493B2

公开(公告)日：2019-10-01

申请号：US15989635

申请日：2018-05-25

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285

Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

公开(公告)号：US10283352B2

公开(公告)日：2019-05-07

申请号：US15919902

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C23C16/00 ,  H01L21/02 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US20190115254A1

公开(公告)日：2019-04-18

申请号：US16159128

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Ben-Li Sheu ,  Feng Q. Liu ,  Tae Hong Ha ,  Mei Chang ,  Shirish Pethe

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

Abstract: Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

公开(公告)号：US09659814B2

公开(公告)日：2017-05-23

申请号：US14169937

申请日：2014-01-31

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC: H01L21/66 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/76856 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76841 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

公开(公告)号：US20180277428A1

公开(公告)日：2018-09-27

申请号：US15989635

申请日：2018-05-25

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L21/76856 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76841 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.