公开(公告)号：US20190088489A1

公开(公告)日：2019-03-21

申请号：US16180817

申请日：2018-11-05

申请人： Applied Materials, Inc.

发明人： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC分类号： H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

摘要： Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US20160181150A1

公开(公告)日：2016-06-23

申请号：US14919149

申请日：2015-10-21

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

摘要： Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

摘要翻译： 描述了制造具有包含氮化锰的阻挡层的半导体器件的半导体器件和方法。 还描述了与包含Mn（N）和任选的粘合层的阻挡层相同的半导体器件和方法。

公开(公告)号：US20160032455A1

公开(公告)日：2016-02-04

申请号：US14815625

申请日：2015-07-31

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Ben-Li Sheu ,  David Thompson ,  Mei Chang ,  Paul F. Ma ,  David Knapp ,  Jeffrey W. Anthis ,  Annamalai Lakshmanan

IPC分类号： C23C16/455 ,  C25D3/38 ,  C25D5/34 ,  C23C16/18 ,  C23C16/02

CPC分类号： C23C16/45553 ,  C23C16/045 ,  C23C16/18 ,  H01L21/28562 ,  H01L21/76873

摘要： Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate.

摘要翻译： 利用有机金属化合物沉积金属层的方法。 衬底表面暴露于气态有机金属金属前体和有机金属金属反应物以在衬底上形成金属层（例如铜层）。

公开(公告)号：US20240264336A1

公开(公告)日：2024-08-08

申请号：US18605667

申请日：2024-03-14

申请人： APPLIED MATERIALS, INC.

发明人： Alexander Berger ,  Cheng-Hsuan Chou ,  David Knapp

IPC分类号： G02B1/14 ,  B05D1/00 ,  B05D7/22 ,  C23C16/04 ,  G02B3/00

CPC分类号： G02B1/14 ,  B05D1/60 ,  B05D7/22 ,  C23C16/045 ,  G02B3/00

摘要： Described herein is a method of depositing a conformal, optically transparent coating onto a surface of one or more internal components that are enclosed within an assembled device including an optical encoder using a non-line-of-sight deposition process without altering a structure of the assembled device or impacting functionality of the assembled device. Also described is an assembled device including an optical encoder, where one or more internal components enclosed within the optical encoder and a coating deposited onto a surface of the internal components, where the coating is a conformal, optically transparent coating that is resistant to corrosion by at least one of fluorine-, chlorine-, sulfur-, hydrogen-, bromine-, or nitrogen-based acids and that does not negatively impact functionality of the internal components.

公开(公告)号：US09922872B2

公开(公告)日：2018-03-20

申请号：US15151612

申请日：2016-05-11

申请人： Applied Materials, Inc.

发明人： David Knapp ,  Jeffrey W. Anthis ,  Xinyu Fu ,  Srinivas Gandikota

IPC分类号： H01L21/768 ,  H01L23/498 ,  H01L23/532 ,  H01L21/285

CPC分类号： H01L21/76876 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/49866 ,  H01L23/53266

摘要： Processing methods comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate.

公开(公告)号：US09916975B2

公开(公告)日：2018-03-13

申请号：US14919149

申请日：2015-10-21

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC分类号： H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C23C16/00 ,  H01L21/02 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34

CPC分类号： H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

摘要： Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US10483116B2

公开(公告)日：2019-11-19

申请号：US16180817

申请日：2018-11-05

申请人： Applied Materials, Inc.

发明人： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC分类号： H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

摘要： Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US10283352B2

公开(公告)日：2019-05-07

申请号：US15919902

申请日：2018-03-13

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC分类号： H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C23C16/00 ,  H01L21/02 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34

摘要： Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US10115593B2

公开(公告)日：2018-10-30

申请号：US15833728

申请日：2017-12-06

申请人： APPLIED MATERIALS, INC.

发明人： David Knapp ,  Simon Huang ,  Jeffrey W. Anthis ,  Philip Alan Kraus ,  David Thompson

IPC分类号： H01L21/033 ,  H01J37/32 ,  H01L21/02 ,  B82Y30/00 ,  C08K3/04

摘要： Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

公开(公告)号：US20160336222A1

公开(公告)日：2016-11-17

申请号：US15151612

申请日：2016-05-11

申请人： Applied Materials, Inc.

发明人： David Knapp ,  Jeffrey W. Anthis ,  Xinyu Fu ,  Srinivas Gandikota

IPC分类号： H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC分类号： H01L21/76876 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/49866 ,  H01L23/53266

摘要： Processing methods comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate.

摘要翻译： 处理方法包括将基底暴露于成核促进剂，随后顺次暴露包含含金属化合物和第二反应气体的第一反应气体，以在基材上形成含金属膜。