Invention Application
- Patent Title: HIGH THROUGH-PUT AND LOW TEMPERATURE ALD COPPER DEPOSITION AND INTEGRATION
- Patent Title (中): 高通量和低温铝箔沉积和整合
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Application No.: US14815625Application Date: 2015-07-31
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Publication No.: US20160032455A1Publication Date: 2016-02-04
- Inventor: Feng Q. Liu , Ben-Li Sheu , David Thompson , Mei Chang , Paul F. Ma , David Knapp , Jeffrey W. Anthis , Annamalai Lakshmanan
- Applicant: Applied Materials, Inc.
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C25D3/38 ; C25D5/34 ; C23C16/18 ; C23C16/02
Abstract:
Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate.
Information query
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