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36 条记录 (耗时 0.022 秒)

    Collimator for a physical vapor deposition chamber
    1.
    外观设计
    Collimator for a physical vapor deposition chamber 有权

    公开(公告)号：USD1038901S1

    公开(公告)日：2024-08-13

    申请号：US29822866

    申请日：2022-01-12

    申请人： Applied Materials, Inc.

    设计人： Fuhong Zhang ,  Martin Lee Riker ,  Suhas Bangalore Umesh ,  Madan Kumar Shimoga Mylarappa

    摘要： FIG. 1 is a top isometric view of collimator for a physical vapor deposition chamber, according to one embodiment of the novel design.
    FIG. 2 is a bottom isometric view thereof.
    FIG. 3 is a top plan view thereof.
    FIG. 4 is a bottom plan view thereof.
    FIG. 5 is a front elevation view thereof.
    FIG. 6 is a back elevation view thereof.
    FIG. 7 is a left elevation view thereof.
    FIG. 8 is a right elevation view thereof; and,
    FIG. 9 is a cross-sectional view taken along line 9-9 in FIG. 3.
    The dash-dash broken lines in the drawings illustrate portions of the article that form no part of the claimed design. The dot-dash broken lines are for the purpose of illustrating the indications of the cross-section and form no part of the claimed design.

    Collimator for use in a physical vapor deposition (PVD) chamber
    3.
    外观设计
    Collimator for use in a physical vapor deposition (PVD) chamber 有权

    公开(公告)号：USD998575S1

    公开(公告)日：2023-09-12

    申请号：US29730633

    申请日：2020-04-07

    申请人： APPLIED MATERIALS, INC.

    设计人： Martin Lee Riker ,  Fuhong Zhang ,  Lanlan Zhong ,  Kishor Kumar Kalathiparambil

    摘要： FIG. 1 is a top isometric view of collimator for a physical vapor deposition chamber, according to one embodiment of the novel design.
    FIG. 2 is a bottom isometric view thereof.
    FIG. 3 is a top plan view thereof.
    FIG. 4 is a bottom plan view thereof.
    FIG. 5 is a right elevation view thereof.
    FIG. 6 is a left elevation view thereof.
    FIG. 7 is a front elevation view thereof.
    FIG. 8 is a rear elevation view thereof.
    FIG. 9 is a cross sectional view taken along line 9-9 in FIG. 3.
    FIG. 10 is a top isometric view of collimator for a physical vapor deposition chamber, according to another embodiment of the novel design.
    FIG. 11 is a bottom isometric view thereof.
    FIG. 12 is a top plan view thereof.
    FIG. 13 is a bottom plan view thereof.
    FIG. 14 is a right elevation view thereof.
    FIG. 15 is a left elevation view thereof.
    FIG. 16 is a front elevation view thereof.
    FIG. 17 is a rear elevation view thereof; and,
    FIG. 18 is a cross sectional view taken along line 18-18 in FIG. 12.
    The dashed lines in FIGS. 10-18 represent unclaimed environment and form no part of the claimed design.

    Biasable flux optimizer / collimator for PVD sputter chamber
    4.
    发明授权
    Biasable flux optimizer / collimator for PVD sputter chamber 有权

    公开(公告)号：US11309169B2

    公开(公告)日：2022-04-19

    申请号：US16910151

    申请日：2020-06-24

    申请人： Applied Materials, Inc.

    发明人： Martin Lee Riker ,  Fuhong Zhang ,  Anthony Infante ,  Zheng Wang

    IPC分类号： H01J37/34 ,  C23C14/04 ,  H01J37/32

    摘要： A collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

    Biasable flux optimizer / collimator for PVD sputter chamber
    5.
    发明授权
    Biasable flux optimizer / collimator for PVD sputter chamber 有权

    公开(公告)号：US10347474B2

    公开(公告)日：2019-07-09

    申请号：US15940398

    申请日：2018-03-29

    申请人： Applied Materials, Inc.

    发明人： Martin Lee Riker ,  Fuhong Zhang ,  Anthony Infante ,  Zheng Wang

    IPC分类号： H01J37/34 ,  C23C14/04

    摘要： In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

    Collimator for a physical vapor deposition (PVD) chamber
    7.
    外观设计
    Collimator for a physical vapor deposition (PVD) chamber 有权

    公开(公告)号：USD1026839S1

    公开(公告)日：2024-05-14

    申请号：US29863220

    申请日：2022-12-16

    申请人： Applied Materials, Inc.

    设计人： Martin Lee Riker ,  Luke Vianney Varkey ,  Xiangjin Xie

    摘要： FIG. 1 is a top isometric view of collimator for a physical vapor deposition (PVD) chamber showing our new design.
    FIG. 2 is a bottom isometric view thereof.
    FIG. 3 is a top plan view thereof.
    FIG. 4 is a bottom plan view thereof.
    FIG. 5 is a front elevation view thereof.
    FIG. 6 is a back elevation view thereof.
    FIG. 7 is a left side elevation view thereof.
    FIG. 8 is a right side elevation view thereof; and,
    FIG. 9 is a cross-sectional view taken along line 9-9 in FIG. 3.
    The dash-dash broken lines in the drawings illustrate portions of the article that form no part of the claimed design. The dot-dash broken lines are for the purpose of illustrating the indications of the cross-section and form no part of the claimed design.

    Apparatus for improved anode-cathode ratio for rf chambers
    9.
    发明授权
    Apparatus for improved anode-cathode ratio for rf chambers 有权

    公开(公告)号：US11492697B2

    公开(公告)日：2022-11-08

    申请号：US16908344

    申请日：2020-06-22

    申请人： APPLIED MATERIALS, INC.

    发明人： Kirankumar Neelasandra Savandaiah ,  Keith A. Miller ,  Srinivasa Rao Yedla ,  Chandrashekar Kenchappa ,  Martin Lee Riker

    IPC分类号： C23C14/34 ,  H01J37/34

    摘要： Embodiments of process kits for use in plasma process chambers are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the annular body includes an inner surface having a first segment that extends downward, a second segment that extends radially outward from the first segment, a third segment that extends downward from the second segment, a fourth segment that extends radially outward from the third segment, a fifth segment that extends downward from the fourth segment, a sixth segment that extends radially inward from the fifth segment, a seventh segment that extends downward from the sixth segment, and an eighth segment that extends radially inward from the seventh segment.