公开(公告)号：US11459651B2

公开(公告)日：2022-10-04

申请号：US15426102

申请日：2017-02-07

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong Wang ,  Rongjun Wang ,  Hanbing Wu

IPC分类号： C23C14/58 ,  C23C14/34 ,  C23C14/08 ,  C23C14/14 ,  C23C14/18 ,  C23C14/35 ,  H01J37/34 ,  H01L43/12

摘要： Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.

公开(公告)号：US11810770B2

公开(公告)日：2023-11-07

申请号：US17490840

申请日：2021-09-30

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong Wang ,  Joung Joo Lee ,  Fuhong Zhang ,  Martin Lee Riker ,  Keith A. Miller ,  William Fruchterman ,  Rongjun Wang ,  Adolph Miller Allen ,  Shouyin Zhang ,  Xianmin Tang

IPC分类号： H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  C23C14/54

CPC分类号： H01J37/3458 ,  C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3402 ,  H01J37/345 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/3452 ,  H01J37/3455

摘要： Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20230187204A1

公开(公告)日：2023-06-15

申请号：US17844189

申请日：2022-06-20

申请人： Applied Materials, Inc.

发明人： Xiaodong Wang ,  Kevin Kashefi ,  Rongjun Wang ,  Shi You ,  Keith T. Wong ,  Yuchen Liu ,  Ya-Hsi Hwang ,  Jean Lu

IPC分类号： H01L21/02 ,  H01L21/285

CPC分类号： H01L21/0234 ,  H01L21/28568

摘要： Provided are methods for pre-cleaning a substrate. A substrate having tungsten oxide (WOx) thereon is soaked in tungsten fluoride (WF6), which reduces the tungsten oxide (WOx) to tungsten (W). Subsequently, the substrate is treated with hydrogen, e.g., plasma treatment or thermal treatment, to reduce the amount of fluorine present so that fluorine does not invade the underlying insulating layer.

公开(公告)号：US11542589B2

公开(公告)日：2023-01-03

申请号：US16358465

申请日：2019-03-19

申请人： APPLIED MATERIALS, INC.

发明人： Rongjun Wang ,  Xiaodong Wang ,  Chao Du

IPC分类号： C23C14/14 ,  C23C14/34

摘要： Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.

公开(公告)号：US20200035527A1

公开(公告)日：2020-01-30

申请号：US16592084

申请日：2019-10-03

申请人： Applied Materials, Inc.

发明人： Fuhong Zhang ,  Sunil Kumar Garg ,  Paul Kiely ,  Martin Lee Riker ,  William Fruchterman ,  Zheng Wang ,  Xiaodong Wang

IPC分类号： H01L21/67 ,  G05B19/418 ,  G05B15/02

摘要： Methods and apparatus to minimize electromagnetic interference between adjacent process chambers of a cluster tool are described. The start time of the subject recipe is controlled based on the electromagnetic process window of the subject process chamber, the electromagnetic window of the first adjacent process chamber and of an optional second adjacent process chamber. The start time of the subject process chamber is controlled to prevent temporal overlap of the electromagnetic window of the subject chamber with the electromagnetic window of an adjacent chamber.

公开(公告)号：US12094699B2

公开(公告)日：2024-09-17

申请号：US18237934

申请日：2023-08-25

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong Wang ,  Joung Joo Lee ,  Fuhong Zhang ,  Martin Lee Riker ,  Keith A. Miller ,  William Fruchterman ,  Rongjun Wang ,  Adolph Miller Allen ,  Shouyin Zhang ,  Xianmin Tang

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC分类号： H01J37/3458 ,  C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455

摘要： Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20230313364A1

公开(公告)日：2023-10-05

申请号：US17737361

申请日：2022-05-05

申请人： Applied Materials, Inc.

发明人： Kevin KASHEFI ,  Xiaodong Wang ,  Suhas Bangalore Umesh ,  Zheng Ju ,  Jiajie Cen

IPC分类号： C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/32

CPC分类号： C23C14/3407 ,  C23C14/3485 ,  H01J37/3405 ,  C23C14/345 ,  C23C14/35 ,  C23C14/50 ,  H01J37/3458 ,  H01J37/32082

摘要： Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.

公开(公告)号：US11011357B2

公开(公告)日：2021-05-18

申请号：US15890694

申请日：2018-02-07

申请人： APPLIED MATERIALS, INC.

发明人： Hanbing Wu ,  Anantha K. Subramani ,  Ashish Goel ,  Xiaodong Wang ,  Wei W. Wang ,  Rongjun Wang ,  Chi Hong Ching

IPC分类号： H01J37/34 ,  H01L43/12 ,  H01J37/32 ,  H01J61/10 ,  H01L43/08 ,  H01L43/10

摘要： Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.

公开(公告)号：US11335577B2

公开(公告)日：2022-05-17

申请号：US16592084

申请日：2019-10-03

申请人： Applied Materials, Inc.

发明人： Fuhong Zhang ,  Sunil Kumar Garg ,  Paul Kiely ,  Martin Lee Riker ,  William Fruchterman ,  Zheng Wang ,  Xiaodong Wang

IPC分类号： H01L21/67 ,  G05B15/02 ,  G05B19/418

摘要： Methods and apparatus to minimize electromagnetic interference between adjacent process chambers of a cluster tool are described. The start time of the subject recipe is controlled based on the electromagnetic process window of the subject process chamber, the electromagnetic window of the first adjacent process chamber and of an optional second adjacent process chamber. The start time of the subject process chamber is controlled to prevent temporal overlap of the electromagnetic window of the subject chamber with the electromagnetic window of an adjacent chamber.

公开(公告)号：US10998496B2

公开(公告)日：2021-05-04

申请号：US16859350

申请日：2020-04-27

申请人： Applied Materials, Inc.

发明人： Lin Xue ,  Chi Hong Ching ,  Xiaodong Wang ,  Mahendra Pakala ,  Rongjun Wang

IPC分类号： H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L27/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/04 ,  G11C11/22 ,  H01L43/06 ,  H01L43/14 ,  G11C11/18

摘要： Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.