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    DISTRIBUTION COMPONENTS FOR SEMICONDUCTOR PROCESSING SYSTEMS
    3.
    发明申请
    DISTRIBUTION COMPONENTS FOR SEMICONDUCTOR PROCESSING SYSTEMS 有权

    公开(公告)号：US20220028710A1

    公开(公告)日：2022-01-27

    申请号：US16934227

    申请日：2020-07-21

    Applicant: Applied Materials, Inc.

    Inventor： Anantha K. Subramani ,  Yang Guo ,  Seyyed Abdolreza Fazeli ,  Nitin Pathak ,  Badri N. Ramamurthi ,  Kallol Bera ,  Xiaopu Li ,  Philip A. Kraus ,  Swaminathan T. Srinivasan

    IPC: H01L21/67 ,  B65G47/90

    Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures defined through the first lid plate. The systems may include a plurality of isolators. An isolator of the plurality of isolators may be positioned between each lid stack of the plurality of lid stacks and a corresponding aperture of the plurality of apertures defined through the first lid plate. The systems may include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates may be seated on each isolator of the plurality of isolators.

    RF RETURN PATH FOR REDUCTION OF PARASITIC PLASMA
    4.
    发明申请
    RF RETURN PATH FOR REDUCTION OF PARASITIC PLASMA 有权

    公开(公告)号：US20210305020A1

    公开(公告)日：2021-09-30

    申请号：US16829993

    申请日：2020-03-25

    Applicant: Applied Materials, Inc.

    Inventor： Anantha K. Subramani ,  Arun Kumar Kotrappa ,  Hanish Panavalappil Kumarankutty Kumar ,  Ramcharan Sundar

    IPC: H01J37/32

    Abstract: Embodiments disclosed herein include an RF return assembly. In an embodiment, the RF return assembly comprises a first plate with a flange, where a first hole and a second hole pass through the flange. The RF return assembly may further comprise a second plate over the first plate, and a first body positioned above the flange. In an embodiment, the RF return assembly further comprises a second body positioned below the flange, where the first body is affixed to the second body by a pillar that passes through the first hole. In an embodiment, the RF return assembly further comprises a spring attached between the second plate and the second body, where the spring passes through the second hole, and a conductive band to electrically couple the first body to the flange.

    Shaped electrodes for improved plasma exposure from vertical plasma source
    5.
    发明授权
    Shaped electrodes for improved plasma exposure from vertical plasma source 有权

    公开(公告)号：US10763085B2

    公开(公告)日：2020-09-01

    申请号：US16220825

    申请日：2018-12-14

    Applicant: Applied Materials, Inc.

    Inventor： Kallol Bera ,  Dmitry A. Dzilno ,  Anantha K. Subramani ,  John C. Forster ,  Tsutomu Tanaka

    IPC: H01J37/32

    Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.

    Methods and apparatus for processing a substrate
    7.
    发明授权
    Methods and apparatus for processing a substrate 有权

    公开(公告)号：US10431440B2

    公开(公告)日：2019-10-01

    申请号：US14975793

    申请日：2015-12-20

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Rongjun Wang ,  Anantha K. Subramani ,  Chi Hong Ching ,  Xianmin Tang

    IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32 ,  C23C14/08 ,  H01L21/02

    Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.

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