公开(公告)号：US12142458B2

公开(公告)日：2024-11-12

申请号：US17137296

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Farzad Houshmand ,  Philip A. Kraus ,  Abhishek Chowdhury ,  John C. Forster ,  Kallol Bera

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H05H1/24 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US11946140B2

公开(公告)日：2024-04-02

申请号：US17213908

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Seyyed Abdolreza Fazeli ,  Yang Guo ,  Ramcharan Sundar ,  Arun Kumar Kotrappa ,  Steven Mosbrucker ,  Steven D. Marcus ,  Xinhai Han ,  Kesong Hu ,  Tianyang Li ,  Philip A. Kraus

IPC: C23C16/455 ,  C23C14/56 ,  C23C16/458 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C14/564 ,  C23C16/45536 ,  C23C16/4586 ,  H01J37/32082

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

公开(公告)号：US20210166923A1

公开(公告)日：2021-06-03

申请号：US17150702

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  H01L21/67 ,  C23C16/34 ,  C23C16/509 ,  C23C16/40 ,  C23C16/458 ,  C23C16/44

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US10903056B2

公开(公告)日：2021-01-26

申请号：US15980158

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  C23C16/50 ,  C23C16/455 ,  C23C16/509 ,  C23C16/458 ,  C23C16/44 ,  H01L21/02 ,  H01L21/67 ,  C23C16/34 ,  C23C16/40

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US10312048B2

公开(公告)日：2019-06-04

申请号：US15834939

申请日：2017-12-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Travis Koh ,  Olivier Luere ,  Olivier Joubert ,  Philip A. Kraus ,  Rajinder Dhindsa ,  James Hugh Rogers

IPC: H01J37/08 ,  C23C14/54 ,  C23C16/50 ,  H01J37/248

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

公开(公告)号：US12119221B2

公开(公告)日：2024-10-15

申请号：US18125509

申请日：2023-03-23

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Philip A. Kraus ,  Joseph AuBuchon

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02274

Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.

公开(公告)号：US11823870B2

公开(公告)日：2023-11-21

申请号：US16990306

申请日：2020-08-11

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Arkaprava Dan ,  Joseph AuBuchon ,  Kyoung Ha Kim ,  Philip A. Kraus

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/34 ,  H01L21/768 ,  C23C16/511

CPC classification number: H01J37/32201 ,  C23C16/34 ,  C23C16/511 ,  H01L21/28568 ,  H01L21/76841 ,  H01J2237/3321

Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.

公开(公告)号：US20230199992A1

公开(公告)日：2023-06-22

申请号：US18109660

申请日：2023-02-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Phillip A. Criminale ,  Zhiqiang Guo ,  Philip A. Kraus ,  Andrew Myles ,  Martin Perez-Guzman

IPC: H05K5/06 ,  H05K1/18 ,  H05K5/03 ,  H05K7/14

CPC classification number: H05K5/069 ,  H05K1/181 ,  H05K5/03 ,  H05K7/1427 ,  H05K2201/10151 ,  H05K2201/10015

Abstract: A method includes establishing, by a diagnostic disc, a secure wireless connection with a computing system using a wireless communication circuit of the diagnostic disc before or after the diagnostic disc is placed into a processing chamber. The method further includes generating, at a vacuum of about 0.1 mTorr to about 50 mTorr and a temperature of about −20° C. to about 120° C., by at least one non-contact sensor of the diagnostic disc, sensor data of a component disposed within the processing chamber. The method further includes wirelessly transmitting the sensor data to the computing system via the secure wireless connection using the wireless communication circuit. The diagnostic disc includes a disc-shaped body, a printed circuit board (PCB), a power source coupled to the PCB, a casing that encapsulates the power source, and a cover positioned over the PCB and the power source.

公开(公告)号：US20220336223A1

公开(公告)日：2022-10-20

申请号：US17846155

申请日：2022-06-22

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Xuesong Lu ,  Tae Hong Ha ,  Xianmin Tang ,  Andrew Nguyen ,  Tza-Jing Gung ,  Philip A. Kraus ,  Chung Nang Liu ,  Hui Sun ,  Yufei Hu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/8234

Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

公开(公告)号：US20220307131A1

公开(公告)日：2022-09-29

申请号：US17213908

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Seyyed Abdolreza Fazeli ,  Yang Guo ,  Ramcharan Sundar ,  Arun Kumar Kotrappa ,  Steven Mosbrucker ,  Steven D. Marcus ,  Xinhai Han ,  Kesong Hu ,  Tianyang Li ,  Philip A. Kraus

IPC: C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  C23C14/56

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.