公开(公告)号：US11623253B2

公开(公告)日：2023-04-11

申请号：US17582100

申请日：2022-01-24

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Sanjeev Baluja ,  Wei V. Tang

IPC: B08B7/00

Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.

公开(公告)号：US20210398823A1

公开(公告)日：2021-12-23

申请号：US16905862

申请日：2020-06-18

Applicant: Applied Materials, Inc.

Inventor： Mauro Cimino ,  Arkaprava Dan ,  Paul Z. Wirth

IPC: H01L21/67

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A valve upstream of a shared volume is controlled by at least two pressurizing sequences during a process it the processing chamber. The first pressurizing sequence opens and closes the upstream valve a first number of cycles and the second pressurizing sequence opens and closes the upstream valve less frequently after the first number of cycles. The open/close timing of the second pressurizing sequence occurs less frequently than the open/close timing of the first pressurizing sequence.

公开(公告)号：US20230295803A1

公开(公告)日：2023-09-21

申请号：US18135024

申请日：2023-04-14

Applicant: Applied Materials, Inc.

Inventor： Haoming Yan ,  Shih Chung Chen ,  Mandyam Sriram ,  EunKee Hong ,  Janardhan Devrajan ,  Lakmal C. Kalutarage ,  Yongjing Lin ,  Lisa Michelle Mandrell ,  Arkaprava Dan

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/321 ,  H01L21/3205 ,  H01L29/40

CPC classification number: C23C16/45553 ,  C23C16/56 ,  H01L21/28525 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/32055 ,  H01L21/28575 ,  H01L29/401

Abstract: Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl4), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH3), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

公开(公告)号：US11599069B1

公开(公告)日：2023-03-07

申请号：US17467020

申请日：2021-09-03

Applicant: Applied Materials, Inc.

Inventor： Mauro Cimino ,  Arkaprava Dan ,  Sanjeev Baluja

IPC: G05B13/02 ,  H01L21/67

Abstract: Embodiments disclosed herein include a method for auto-tuning a system. In an embodiment, the method comprises determining if the system is in a steady state. Thereafter, the method includes exciting the system. In an embodiment, the method comprises storing process feedback measurements from the excited system to provide a set of stored data. In an embodiment, the set of stored data is a subset of all available data generated by the excited system. In an embodiment, the method further comprises determining when the excited system returns to the steady state, and tuning the system using the set of stored data.

公开(公告)号：US11220747B2

公开(公告)日：2022-01-11

申请号：US16658396

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677

Abstract: Apparatus and methods to process one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern.

公开(公告)号：US20200066572A1

公开(公告)日：2020-02-27

申请号：US16664406

申请日：2019-10-25

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

公开(公告)号：US20240352586A1

公开(公告)日：2024-10-24

申请号：US18761994

申请日：2024-07-02

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Robert Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/45544 ,  C23C16/52

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

公开(公告)号：US20220152668A1

公开(公告)日：2022-05-19

申请号：US17582100

申请日：2022-01-24

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Sanjeev Baluja ,  Wei V. Tang

IPC: B08B7/00

Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.

公开(公告)号：US20210351060A1

公开(公告)日：2021-11-11

申请号：US17314714

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Mike Murtagh ,  Sanjeev Baluja

IPC: H01L21/683 ,  H01L21/67 ,  G01R27/26 ,  H02N13/00

Abstract: Substrate supports, substrate support assemblies and methods of using the substrate supports are described. The substrate support has a support surface with at least two electrodes and a plurality of purge channels bounded by a seal band. A power supply connected to the electrodes configured as an electrostatic chuck. A capacitance of the substrate is measured while on the substrate support to determine the chucking state of the substrate.

公开(公告)号：US20210050186A1

公开(公告)日：2021-02-18

申请号：US16990306

申请日：2020-08-11

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Arkaprava Dan ,  Joseph AuBuchon ,  Kyoung Ha Kim ,  Philip A. Kraus

IPC: H01J37/32 ,  H01L21/285 ,  H01L21/768 ,  C23C16/34 ,  C23C16/511

Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.