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公开(公告)号：US11508554B2
公开(公告)日：2022-11-22
申请号：US16355153
申请日：2019-03-15
Applicant: Applied Materials, Inc.
Inventor： Anurag Kumar Mishra , James Rogers , Leonid Dorf , Rajinder Dhindsa , Olivier Luere
IPC: H01J37/32 , H01L21/683
Abstract: Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.
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公开(公告)号：US11462389B2
公开(公告)日：2022-10-04
申请号：US17315259
申请日：2021-05-07
Applicant: Applied Materials, Inc.
Inventor： Leonid Dorf , Rajinder Dhindsa , James Rogers , Daniel Sang Byun , Evgeny Kamenetskiy , Yue Guo , Kartik Ramaswamy , Valentin N. Todorow , Olivier Luere , Jonathan Kolbeck , Linying Cui
IPC: H01J37/32 , H01L21/311 , H01L21/3065 , H01L21/683
Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.
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公开(公告)号：US10916408B2
公开(公告)日：2021-02-09
申请号：US16790143
申请日：2020-02-13
Applicant: Applied Materials, Inc.
Inventor： Leonid Dorf , Evgeny Kamenetskiy , James Rogers , Olivier Luere , Rajinder Dhindsa , Viacheslav Plotnikov
IPC: H01J37/32 , H01L21/311 , H05H1/24 , H01L21/683
Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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公开(公告)号：US10791617B2
公开(公告)日：2020-09-29
申请号：US16738697
申请日：2020-01-09
Applicant: Applied Materials, Inc.
Inventor： Leonid Dorf , Olivier Luere , Rajinder Dhindsa , James Rogers , Sunil Srinivasan , Anurag Kumar Mishra
Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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公开(公告)号：US10475626B2
公开(公告)日：2019-11-12
申请号：US14660531
申请日：2015-03-17
Applicant: APPLIED MATERIALS, INC.
Inventor： Kenneth S. Collins , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Leonid Dorf , Yang Yang
Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.
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Patent Agency Ranking
公开(公告)号：US10448495B1
公开(公告)日：2019-10-15
申请号：US16394860
申请日：2019-04-25
Applicant: Applied Materials, Inc.
Inventor： Leonid Dorf , Olivier Luere , Rajinder Dhindsa , James Rogers , Sunil Srinivasan , Anurag Kumar Mishra
Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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公开(公告)号：US10448494B1
公开(公告)日：2019-10-15
申请号：US16394841
申请日：2019-04-25
Applicant: Applied Materials, Inc.
Inventor： Leonid Dorf , Olivier Luere , Rajinder Dhindsa , James Rogers , Sunil Srinivasan , Anurag Kumar Mishra
Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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公开(公告)号：US10312048B2
公开(公告)日：2019-06-04
申请号：US15834939
申请日：2017-12-07
Applicant: APPLIED MATERIALS, INC.
Inventor： Leonid Dorf , Travis Koh , Olivier Luere , Olivier Joubert , Philip A. Kraus , Rajinder Dhindsa , James Hugh Rogers
IPC: H01J37/08 , C23C14/54 , C23C16/50 , H01J37/248
Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.
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9.发明授权Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator 有权三线圈感应耦合等离子体源，具有来自单个RF发电机的单独控制的线圈电流公开(公告)号：US09082591B2
公开(公告)日：2015-07-14
申请号：US13863614
申请日：2013-04-16
Applicant: APPLIED MATERIALS, INC.
Inventor： Leonid Dorf , Shahid Rauf , Jonathan Liu , Jason A. Kenney , Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Steven Lane
CPC classification number: H01J37/32183 , H01J37/32082
Abstract: An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface.
Abstract translation: 电感耦合等离子体反应器具有三个同心线圈天线和分流器电路，其分别控制三个线圈天线中的每一个中的电流，通过响应于从一个线圈天线接收的线圈天线之间的期望的电流分配，改变分流器电路中的两个可变阻抗元件 用户界面。
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10.发明申请INTERFACE TREATMENT OF SEMICONDUCTOR SURFACES WITH HIGH DENSITY LOW ENERGY PLASMA 有权具有高密度低能量等离子体的半导体表面的界面处理公开(公告)号：US20150093862A1
公开(公告)日：2015-04-02
申请号：US14064933
申请日：2013-10-28
Applicant: APPLIED MATERIALS, INC.
Inventor： Aneesh Nainani , Bhushan N. Zope , Leonid Dorf , Shahid Rauf , Adam Brand , Mathew Abraham , Subhash Deshmukh
IPC: H01L21/02 , H01L21/768 , H01L29/66
CPC classification number: H01L21/02063 , H01J37/3233 , H01L21/02057 , H01L21/02661 , H01L21/3065 , H01L21/76814 , H01L21/823807 , H01L21/823821 , H01L21/8258 , H01L29/66795
Abstract: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.
Abstract translation: 电子束等离子体源用于含有Ge或III-V族化合物半导体材料的半导体表面的软等离子体表面处理。
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