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    PLASMA CHAMBER WITH A MULTIPHASE ROTATING CROSS-FLOW WITH UNIFORMITY TUNING
    2.
    发明申请
    PLASMA CHAMBER WITH A MULTIPHASE ROTATING CROSS-FLOW WITH UNIFORMITY TUNING 有权

    公开(公告)号：US20230057145A1

    公开(公告)日：2023-02-23

    申请号：US17831781

    申请日：2022-06-03

    Applicant: Applied Materials, Inc.

    Inventor： DAISUKE SHIMIZU ,  Kenji Takeshita ,  James D. Carducci ,  Li Ling ,  Hikaru Watanabe ,  Kenneth S. Collins ,  Michael R. Rice

    IPC: H01J37/32 ,  H01L21/3065

    Abstract: A plasma treatment chamber comprises one or more sidewalls and a support surface within the sidewalls holds a workpiece. An array of individual gas injectors is distributed about the sidewalls. Pump ports are along the sidewalls to eject gas from the chamber. Aa etch rate uniformity of a material on the workpiece is controlled by: using the array gas injectors to inject one or more gas flows in across the workpiece; injecting a first gas flow from a first set of adjacent individual gas injectors to etch the materials on the workpiece; and simultaneously injecting a second gas flow from remaining gas injectors. The second gas flow either dilutes the first gas flow to reduce an area on the workpiece having a faster etch rate, or acts as an additional etchant to increase the etch rate in the area of the workpiece having the faster etch rate.

    Plasma reactor with electrode assembly for moving substrate
    3.
    发明授权
    Plasma reactor with electrode assembly for moving substrate 有权

    公开(公告)号：US11355321B2

    公开(公告)日：2022-06-07

    申请号：US15630828

    申请日：2017-06-22

    Applicant: Applied Materials, Inc.

    Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci

    IPC: H01J37/32 ,  C23C16/458 ,  C23C16/54 ,  C23C16/509 ,  C23C16/455

    Abstract: A processing tool for a plasma process includes a chamber body that has an interior space that provides a plasma chamber and that has a ceiling and an opening on a side opposite the ceiling, a workpiece support to hold a workpiece such that at least a portion of a front surface of the workpiece faces the opening, an actuator to generate relative motion between the chamber body and the workpiece support such that the opening moves laterally across the workpiece, a gas distributor to deliver a processing gas to the plasma chamber, an electrode assembly comprising a plurality of coplanar filaments extending laterally through the plasma chamber between the workpiece support and the ceiling, each of the plurality of filaments including a conductor, and a first RF power source to supply a first RF power to the conductors of the electrode assembly to form a plasma.

    Distributed electrode array for plasma processing
    6.
    发明授权
    Distributed electrode array for plasma processing 有权

    公开(公告)号：US10418225B2

    公开(公告)日：2019-09-17

    申请号：US16107855

    申请日：2018-08-21

    Applicant: Applied Materials, Inc.

    Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci ,  Yue Guo ,  Olga Regelman

    IPC: H01J37/32

    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

    Distributed electrode array for plasma processing
    7.
    发明授权
    Distributed electrode array for plasma processing 有权

    公开(公告)号：US10312056B2

    公开(公告)日：2019-06-04

    申请号：US16059608

    申请日：2018-08-09

    Applicant: Applied Materials, Inc.

    Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci ,  Yue Guo ,  Olga Regelman

    IPC: H01J37/32

    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

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