公开(公告)号：US20170099722A1

公开(公告)日：2017-04-06

申请号：US14882878

申请日：2015-10-14

Applicant: APPLIED MATERIALS, INC.

Inventor： KATSUMASA KAWASAKI ,  SERGIO FUKUDA SHOJI ,  JUSTIN PHI ,  DAISUKE SHIMIZU

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32183 ,  H01L21/3065 ,  H05H2001/4682

Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, and providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration.

公开(公告)号：US20200312680A1

公开(公告)日：2020-10-01

申请号：US16370783

申请日：2019-03-29

Applicant: Applied Materials Inc.

Inventor： DAISUKE SHIMIZU ,  Taiki Hatakeyama ,  Sean S. Kang ,  Chunlei Zhang ,  Sergio F. Shoji

IPC: H01L21/67 ,  F16K11/048 ,  F16K37/00

Abstract: Methods and apparatus for controlling fluid distribution to multiple fluid delivery zones in an etch chamber is provided herein. In some embodiments, the apparatus includes a first flow ratio controller and a second flow ratio controller, each having a respective inlet, a first outlet coupled to a first fluid delivery zone in a process chamber, and a second outlet coupled to a second fluid delivery zone in the process chamber, wherein the first flow ratio controller and the second flow ratio controller are configured to provide a flow ratio of a first process fluid and a second process fluid, respectively, between the first outlet and the second outlet, and a third flow ratio controller configured to provide a flow rate of a third process fluid to at least one of the first fluid delivery zone, the second fluid delivery zone, or a third fluid delivery zone.

公开(公告)号：US20230057145A1

公开(公告)日：2023-02-23

申请号：US17831781

申请日：2022-06-03

Applicant: Applied Materials, Inc.

Inventor： DAISUKE SHIMIZU ,  Kenji Takeshita ,  James D. Carducci ,  Li Ling ,  Hikaru Watanabe ,  Kenneth S. Collins ,  Michael R. Rice

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma treatment chamber comprises one or more sidewalls and a support surface within the sidewalls holds a workpiece. An array of individual gas injectors is distributed about the sidewalls. Pump ports are along the sidewalls to eject gas from the chamber. Aa etch rate uniformity of a material on the workpiece is controlled by: using the array gas injectors to inject one or more gas flows in across the workpiece; injecting a first gas flow from a first set of adjacent individual gas injectors to etch the materials on the workpiece; and simultaneously injecting a second gas flow from remaining gas injectors. The second gas flow either dilutes the first gas flow to reduce an area on the workpiece having a faster etch rate, or acts as an additional etchant to increase the etch rate in the area of the workpiece having the faster etch rate.

公开(公告)号：US20200294771A1

公开(公告)日：2020-09-17

申请号：US16777220

申请日：2020-01-30

Applicant: APPLIED MATERIALS, INC.

Inventor： DAISUKE SHIMIZU ,  TAIKI HATAKEYAMA ,  SEAN S. KANG ,  KATSUMASA KAWASAKI ,  CHUNLEI ZHANG

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US20200075290A1

公开(公告)日：2020-03-05

申请号：US16117457

申请日：2018-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： KATSUMASA KAWASAKI ,  JUSTIN PHI ,  KARTIK RAMASWAMY ,  SERGIO FUKUDA SHOJI ,  DAISUKE SHIMIZU

IPC: H01J37/32

Abstract: Methods for RF pulse reflection reduction are provided herein. In some embodiments, a method for processing a substrate in a plasma enhanced substrate processing system using multi-level pulsed RF power includes; receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators, using the master RF generator to generate a transistor-transistor logic (TTL) signal having a base frequency and a first duty cycle, setting a multiplier for each RF generator, dividing the first duty cycle into a high level interval and a low level interval, determining a frequency command set for each RF generator and sending the frequency command set to each RF generator, wherein the frequency command set includes a frequency set point for each RF generator; and providing the plurality of pulsed RF power waveforms from the plurality of RF generators to a process chamber.