公开(公告)号：US20170162365A1

公开(公告)日：2017-06-08

申请号：US15437757

申请日：2017-02-21

Applicant: APPLIED MATERIALS, INC.

Inventor： STEVEN LANE ,  TZA-JING GUNG ,  KARTIK RAMASWAMY ,  TRAVIS KOH ,  JOSEPH F. AUBUCHON ,  YANG YANG

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32669

Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos θ) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos θ) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos θ coil ring is disposed concentrically about the inner electromagnetic cos θ coil ring.

公开(公告)号：US20160027613A1

公开(公告)日：2016-01-28

申请号：US14339990

申请日：2014-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： STEVEN LANE ,  TZA-JING GUNG ,  KARTIK RAMASWAMY ,  TRAVIS KOH ,  JOSEPH F. AUBUCHON ,  YANG YANG

IPC: H01J37/32 ,  H01L21/67 ,  H01J37/147

CPC classification number: H01J37/3211 ,  H01J37/32669

Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos θ) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos θ) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos θ coil ring is disposed concentrically about the inner electromagnetic cos θ coil ring.

Abstract translation: 本文提供了用于控制等离子体室中的磁场的方法和装置。 在一些实施例中，处理室衬套可以包括圆柱形主体，内部电磁余弦-θ（cos＆amp; thetas））线圈，其包括嵌入在主体中并被配置为在第一方向上产生磁场的第一多个内部线圈， 以及外部电磁余弦-θ（cos＆amp;θ）线圈，其包括嵌入在所述主体中的第二多个外部线圈，并被配置为在与所述第一方向正交的第二方向上产生磁场，其中所述外部电磁场和所述外部电磁场; 线圈环围绕内部电磁场和心轴同心放置; 线圈环

公开(公告)号：US20230072594A1

公开(公告)日：2023-03-09

申请号：US17985764

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： JAEYONG CHO ,  VIJAY D. PARKHE ,  HAITAO WANG ,  KARTIK RAMASWAMY ,  CHUNLEI ZHANG

IPC: H01L21/683 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32

Abstract: An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

公开(公告)号：US20200066493A1

公开(公告)日：2020-02-27

申请号：US16448536

申请日：2019-06-21

Applicant: APPLIED MATERIALS, INC.

Inventor： HAMID NOORBAKHSH ,  KARTIK RAMASWAMY ,  SERGIO F. SHOJI ,  KENNY DOAN ,  JOSEPH PERRY

IPC: H01J37/32

Abstract: Methods and apparatus for confining plasma in a process chamber. In some embodiments, the apparatus includes a first liner with a first set of openings, the first liner configured to surround a substrate support when installed and a second liner with a second set of openings, the second liner configured to surround the substrate support under the first liner when installed, wherein the first set of openings and the second set of openings are configured to be offset from each other when installed in the process chamber to prevent a line-of-sight through the first liner and the second liner from a top down viewpoint, and wherein the first liner and the second liner are configured to be spaced apart vertically when installed in the process chamber to allow high fluid conductance through the first set of openings and the second set of openings.

公开(公告)号：US20180254171A1

公开(公告)日：2018-09-06

申请号：US15449456

申请日：2017-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： WONSEOK LEE ,  KARTIK RAMASWAMY ,  Ankur AGARWAL ,  Haitao WANG

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32577 ,  H01J37/32697 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/6833

Abstract: Methods and apparatus for boosting ion energies are contemplated herein. In one embodiment, the methods and apparatus comprises a controller, a process chamber with a symmetrical plasma source configured to process a wafer, one or more very high frequency (VHF) sources, coupled to the process chamber, to generate plasma density and two or more frequency generators that generate low frequencies relative to the one or more VHF sources, coupled to a bottom electrode of the process chamber, the two or more low frequency generators configured to dissipate energy in the plasma sheath, wherein the controller controls the one or more VHF sources to generate a VHF signal and the two or more low frequency sources to generate two or more low frequency signals.

公开(公告)号：US20160116518A1

公开(公告)日：2016-04-28

申请号：US14924954

申请日：2015-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： HAITAO WANG ,  LAWRENCE WONG ,  KARTIK RAMASWAMY ,  CHUNLEI ZHANG

IPC: G01R29/24 ,  H01L21/683

CPC classification number: G01R29/24 ,  H01L21/67253 ,  H01L21/6833

Abstract: Methods and apparatus for measurement of a surface charge profile of an electrostatic chuck are provided herein. In some embodiments, an apparatus for measurement of a surface charge profile of an electrostatic chuck includes: an electrostatic charge sensor disposed on a substrate to obtain data indicative of an electrostatic charge on an electrostatic chuck; and a transmitter disposed on the substrate and having an input in communication with an output of the electrostatic charge sensor to transmit the data.

Abstract translation: 本文提供了用于测量静电卡盘的表面电荷分布的方法和装置。 在一些实施例中，用于测量静电卡盘的表面电荷分布的装置包括：静电电荷传感器，设置在基板上以获得指示静电卡盘上的静电电荷的数据; 以及发射器，其布置在所述衬底上并且具有与所述静电电荷传感器的输出端相通的输入端以传输所述数据。

公开(公告)号：US20130213935A1

公开(公告)日：2013-08-22

申请号：US13849729

申请日：2013-03-25

Applicant: APPLIED MATERIALS, INC.

Inventor： BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

IPC: C23F1/00

CPC classification number: C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，蚀刻介电层的方法包括通过脉冲具有第一占空比的第一RF源信号来产生等离子体; 向所述等离子体施加具有第二占空比的第二RF偏置信号; 向所述等离子体施加具有第三占空比的第三RF偏置信号，其中所述第一，第二和第三信号被同步; 调整所述第一RF源信号和所述第二或第三RF偏置信号中的至少一个之间的相位差，以控制所述等离子体中的等离子体或电荷积聚中的等离子体离子密度不均匀性中的至少一个; 并用等离子体蚀刻电介质层。

公开(公告)号：US20140370708A1

公开(公告)日：2014-12-18

申请号：US14301847

申请日：2014-06-11

Applicant: APPLIED MATERIALS, INC.

Inventor： BANQIU WU ,  AJAY KUMAR ,  LEONID DORF ,  SHAHID RAUF ,  KARTIK RAMASWAMY ,  OMKARAM NALAMASU

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/31138 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/004 ,  H01J37/32091 ,  H01J37/3233 ,  H01J37/3266 ,  H01L21/0273

Abstract: Methods for reducing the line width roughness on a photoresist pattern are provided herein. In some embodiments, a method of processing a patterned photoresist layer disposed atop a substrate includes flowing a process gas into a processing volume of a process chamber having the substrate disposed therein; forming a plasma within the process chamber from the process gas, wherein the plasma has a ion energy of about 1 eV to about 10 eV; and etching the patterned photoresist layer with species from the plasma to at least one of smooth a line width roughness of a sidewall of the patterned photoresist layer or remove debris.

Abstract translation: 本文提供了减少光致抗蚀剂图案上的线宽粗糙度的方法。 在一些实施例中，处理设置在基板顶上的图案化光致抗蚀剂层的方法包括将工艺气体流入其中布置有衬底的处理室的处理容积; 在所述处理室内从所述处理气体形成等离子体，其中所述等离子体具有约1eV至约10eV的离子能; 以及将来自等离子体的物质的图案化光致抗蚀剂层蚀刻成图案化光致抗蚀剂层的侧壁的线宽粗糙度的至少一个或去除碎屑。

公开(公告)号：US20140020836A1

公开(公告)日：2014-01-23

申请号：US13666245

申请日：2012-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： ANDREW NGUYEN ,  KENNETH S. COLLINS ,  KARTIK RAMASWAMY ,  SHAHID RAUF ,  JAMES D. CARDUCCI ,  DOUGLAS A. BUCHBERGER, JR. ,  ANKUR AGARWAL ,  JASON A. KENNEY ,  LEONID DORF ,  AJIT BALAKRISHNA ,  RICHARD FOVELL

IPC: H05H1/46

CPC classification number: C23F1/08 ,  B01J12/002 ,  C23C14/28 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32733 ,  H01J37/32834 ,  H05H1/46

Abstract: A plasma reactor for processing a workplace includes a reactor chamber having a ceiling and a sidewali and a workplace support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.

Abstract translation: 用于处理工作场所的等离子体反应器包括具有天花板和侧瓦的反应室，以及面向天花板的工作台支架，并且限定了处理区域，以及一对重叠在天花板上的同心独立激发的RF线圈天线和与RF 侧壁并面向天花板下方的侧壁，并独立激发。

公开(公告)号：US20200075290A1

公开(公告)日：2020-03-05

申请号：US16117457

申请日：2018-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： KATSUMASA KAWASAKI ,  JUSTIN PHI ,  KARTIK RAMASWAMY ,  SERGIO FUKUDA SHOJI ,  DAISUKE SHIMIZU

IPC: H01J37/32

Abstract: Methods for RF pulse reflection reduction are provided herein. In some embodiments, a method for processing a substrate in a plasma enhanced substrate processing system using multi-level pulsed RF power includes; receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators, using the master RF generator to generate a transistor-transistor logic (TTL) signal having a base frequency and a first duty cycle, setting a multiplier for each RF generator, dividing the first duty cycle into a high level interval and a low level interval, determining a frequency command set for each RF generator and sending the frequency command set to each RF generator, wherein the frequency command set includes a frequency set point for each RF generator; and providing the plurality of pulsed RF power waveforms from the plurality of RF generators to a process chamber.