公开(公告)号：US20230195060A1

公开(公告)日：2023-06-22

申请号：US17558509

申请日：2021-12-21

Applicant: Applied Materials, Inc.

Inventor： Vivek Bharat Shah ,  Chunlei Zhang ,  Anders Andelman Nottrott

IPC: G05B13/04 ,  G05B19/18

CPC classification number: G05B13/048 ,  G05B19/188 ,  G05B2219/45031

Abstract: A method includes receiving data indicative of properties of a substrate support from one or more sensors of a removable sensor assembly disposed proximate to the substrate support. The method further includes providing data based on the data indicative of properties of a substrate support to a physics-based model of the substrate support. The method further includes receiving predicted performance data of the substrate support from the physics-based model.

公开(公告)号：US11622419B2

公开(公告)日：2023-04-04

申请号：US16595801

申请日：2019-10-08

Applicant: Applied Materials, Inc.

Inventor： Chunlei Zhang ,  Phillip Criminale ,  Steven E. Babayan ,  David Ullstrom

IPC: H05B3/68 ,  H05B1/02 ,  H01L21/67 ,  H01L21/683 ,  H01L21/66

Abstract: Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on a substrate support assembly having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate. The spatially tunable heaters are controlled in response to the deviation profile to enable discrete lateral and azimuthal tuning of local hot or cold spots on the substrate support assembly in forming a second temperature profile. A second substrate is then processed using the second temperature profile.

公开(公告)号：US20200312680A1

公开(公告)日：2020-10-01

申请号：US16370783

申请日：2019-03-29

Applicant: Applied Materials Inc.

Inventor： DAISUKE SHIMIZU ,  Taiki Hatakeyama ,  Sean S. Kang ,  Chunlei Zhang ,  Sergio F. Shoji

IPC: H01L21/67 ,  F16K11/048 ,  F16K37/00

Abstract: Methods and apparatus for controlling fluid distribution to multiple fluid delivery zones in an etch chamber is provided herein. In some embodiments, the apparatus includes a first flow ratio controller and a second flow ratio controller, each having a respective inlet, a first outlet coupled to a first fluid delivery zone in a process chamber, and a second outlet coupled to a second fluid delivery zone in the process chamber, wherein the first flow ratio controller and the second flow ratio controller are configured to provide a flow ratio of a first process fluid and a second process fluid, respectively, between the first outlet and the second outlet, and a third flow ratio controller configured to provide a flow rate of a third process fluid to at least one of the first fluid delivery zone, the second fluid delivery zone, or a third fluid delivery zone.

公开(公告)号：US10770270B2

公开(公告)日：2020-09-08

申请号：US15383124

申请日：2016-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Jaeyong Cho ,  Haitao Wang ,  Vijay D. Parkhe ,  Kartik Ramaswamy ,  Chunlei Zhang

IPC: H01L21/683 ,  H01T23/00 ,  H01J37/32 ,  H01L21/67

Abstract: An electrostatic chuck is described to carry a workpiece for processing such as high power plasma processing. In embodiments, the chuck includes a top plate to carry the workpiece, the top plate having an electrode to grip the workpiece, a cooling plate under the top plate to cool the top plate, a gas hole through the cooling plate and the top plate to feed a gas to the workpiece through the top plate, and an aperture-reducing plug in the cooling plate gas hole to conduct gas flow through the hole.

公开(公告)号：US10593518B1

公开(公告)日：2020-03-17

申请号：US16270803

申请日：2019-02-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Daisuke Shimizu ,  Taiki Hatakeyama ,  Sean S. Kang ,  Katsumasa Kawasaki ,  Chunlei Zhang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US20200066566A1

公开(公告)日：2020-02-27

申请号：US16674974

申请日：2019-11-05

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Anwar Husain ,  Haitao Wang ,  Evans Yip Lee ,  Jaeyong Cho ,  Hamid Noorbakhsh ,  Kenny L. Doan ,  Sergio Fukuda Shoji ,  Chunlei Zhang

IPC: H01L21/683 ,  H01L21/687

Abstract: Embodiments include an electrostatic chuck assembly having an electrostatic chuck mounted on an insulator. The electrostatic chuck and insulator may be within a chamber volume of a process chamber. In an embodiment, a ground shield surrounds the electrostatic chuck and the insulator, and a gap between the ground shield and the electrostatic chuck provides an environment at risk for electric field emission. A dielectric filler can be placed within the gap to reduce a likelihood of electric field emission. The dielectric filler can have a flexible outer surface that covers or attaches to the electrostatic chuck, or an interface between the electrostatic chuck and the insulator Other embodiments are also described and claimed.

公开(公告)号：US20180366359A1

公开(公告)日：2018-12-20

申请号：US15628396

申请日：2017-06-20

Applicant: Applied Materials, Inc.

Inventor： Haitao Wang ,  Wonseok Lee ,  Sergio Fukuda Shoji ,  Chunlei Zhang ,  Kartik Ramaswamy

IPC: H01L21/683 ,  H02N13/00 ,  H01L21/67

CPC classification number: H01L21/67259 ,  H01L21/6831 ,  Y10T29/49998 ,  Y10T279/23

Abstract: A method and apparatus for de-chucking a workpiece is described that uses a swing voltage sequence. One example pertains to a method that includes applying a mechanical force from an electrostatic chuck against the back side of a workpiece that is electrostatically clamped to the chuck, applying a sequence of voltage pulses with a same polarity to the electrodes, each pulse of the sequence having a lower voltage than the preceding pulse, each pulse of the sequence having a lower voltage than the preceding pulse, and determining whether the workpiece is released from the chuck after the sequence of additional voltage pulses and if the workpiece is not released then repeating applying the sequence of voltage pulses.

公开(公告)号：US20240361239A1

公开(公告)日：2024-10-31

申请号：US18767516

申请日：2024-07-09

Applicant: Applied Materials, Inc.

Inventor： Patrick Tae ,  Zhaozhao Zhu ,  Blake W. Erickson ,  Chunlei Zhang

IPC: G01N21/55

CPC classification number: G01N21/55 ,  G01N2021/558

Abstract: Implementations disclosed describe a system including a light source, an optical sensor, and a processing device. The light source directs, during a first time, a probe light into a processing chamber through a window. The light source ceases, during a second time, directing the probe light into the processing chamber through the window. The optical sensor detects, during the first time, a first intensity of a first light. The first light includes a portion of the probe light reflected from the window and a light transmitted from an environment of the processing chamber through the window. The optical sensor detects, during the second time, a second intensity of a second light. The second light includes the light transmitted from the environment of the processing chamber through the window. The processing device determines, using the first intensity and the second intensity, a transmission coefficient of the window.

公开(公告)号：US12031910B2

公开(公告)日：2024-07-09

申请号：US17447745

申请日：2021-09-15

Applicant: Applied Materials, Inc.

Inventor： Patrick Tae ,  Zhaozhao Zhu ,  Blake W. Erickson ,  Chunlei Zhang

IPC: G01N21/55

CPC classification number: G01N21/55 ,  G01N2021/558

Abstract: Implementations disclosed describe a system including a light source, an optical sensor, and a processing device. The light source directs, during a first time, a probe light into a processing chamber through a window. The light source ceases, during a second time, directing the probe light into the processing chamber through the window. The optical sensor detects, during the first time, a first intensity of a first light. The first light includes a portion of the probe light reflected from the window and a light transmitted from an environment of the processing chamber through the window. The optical sensor detects, during the second time, a second intensity of a second light. The second light includes the light transmitted from the environment of the processing chamber through the window. The processing device determines, using the first intensity and the second intensity, a transmission coefficient of the window.

公开(公告)号：US20230195078A1

公开(公告)日：2023-06-22

申请号：US17557816

申请日：2021-12-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Chunlei Zhang ,  Tao Zhang ,  Jairaj Payyapilly

IPC: G05B19/4155

CPC classification number: G05B19/4155 ,  G05B2219/45212

Abstract: An electronic device manufacturing system capable of obtaining metrology data generated using metrology equipment located within a process chamber that performs a deposition process on a substrate according to a process recipe, wherein the process recipe comprises a plurality of setting parameters, and wherein the deposition process generates a plurality of film layers on a surface of the substrate. The manufacturing system can further generate a correction profile based on the metrology data. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe. The manufacturing system can further cause an etch process to be performed on the substrate according to the updated process recipe.