公开(公告)号：US20230195078A1

公开(公告)日：2023-06-22

申请号：US17557816

申请日：2021-12-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Chunlei Zhang ,  Tao Zhang ,  Jairaj Payyapilly

IPC: G05B19/4155

CPC classification number: G05B19/4155 ,  G05B2219/45212

Abstract: An electronic device manufacturing system capable of obtaining metrology data generated using metrology equipment located within a process chamber that performs a deposition process on a substrate according to a process recipe, wherein the process recipe comprises a plurality of setting parameters, and wherein the deposition process generates a plurality of film layers on a surface of the substrate. The manufacturing system can further generate a correction profile based on the metrology data. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe. The manufacturing system can further cause an etch process to be performed on the substrate according to the updated process recipe.

公开(公告)号：US20150097276A1

公开(公告)日：2015-04-09

申请号：US14491828

申请日：2014-09-19

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Kenny L. Doan ,  Li Ling ,  Jairaj Payyapilly ,  Srinivas D. Nemani ,  Daisuke Shimizu ,  Yuju Huang

IPC: H01L29/792 ,  H01L21/66 ,  H01L21/3065

CPC classification number: H01L29/66833 ,  H01L21/31116

Abstract: An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising C4F6H2 in a chamber of an etch reactor, ionizing the C4F6H2 containing gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.

Abstract translation: 通过蚀刻工艺蚀刻具有交替的氧化物层和氮化物层的制品。 蚀刻工艺包括在蚀刻反应器的室中提供包含C 4 F 6 H 2的第一气体，使含有C 4 F 6 H 2的气体电离以产生包含多个离子的等离子体，并使用多个离子蚀刻该制品。

公开(公告)号：US12235624B2

公开(公告)日：2025-02-25

申请号：US17557816

申请日：2021-12-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Chunlei Zhang ,  Tao Zhang ,  Jairaj Payyapilly

IPC: G05B19/4155

Abstract: An electronic device manufacturing system capable of obtaining metrology data generated using metrology equipment located within a process chamber that performs a deposition process on a substrate according to a process recipe, wherein the process recipe comprises a plurality of setting parameters, and wherein the deposition process generates a plurality of film layers on a surface of the substrate. The manufacturing system can further generate a correction profile based on the metrology data. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe. The manufacturing system can further cause an etch process to be performed on the substrate according to the updated process recipe.

公开(公告)号：US09748366B2

公开(公告)日：2017-08-29

申请号：US14491828

申请日：2014-09-19

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Kenny L. Doan ,  Li Ling ,  Jairaj Payyapilly ,  Srinivas D. Nemani ,  Daisuke Shimizu ,  Yuju Huang

IPC: H01L21/31 ,  H01L29/66 ,  H01L21/311

CPC classification number: H01L29/66833 ,  H01L21/31116

Abstract: An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising C4F6H2 in a chamber of an etch reactor, ionizing the C4F6H2 containing gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.