公开(公告)号：US20170099722A1

公开(公告)日：2017-04-06

申请号：US14882878

申请日：2015-10-14

Applicant: APPLIED MATERIALS, INC.

Inventor： KATSUMASA KAWASAKI ,  SERGIO FUKUDA SHOJI ,  JUSTIN PHI ,  DAISUKE SHIMIZU

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32183 ,  H01L21/3065 ,  H05H2001/4682

Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, and providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration.

公开(公告)号：US20200294771A1

公开(公告)日：2020-09-17

申请号：US16777220

申请日：2020-01-30

Applicant: APPLIED MATERIALS, INC.

Inventor： DAISUKE SHIMIZU ,  TAIKI HATAKEYAMA ,  SEAN S. KANG ,  KATSUMASA KAWASAKI ,  CHUNLEI ZHANG

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US20200075290A1

公开(公告)日：2020-03-05

申请号：US16117457

申请日：2018-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： KATSUMASA KAWASAKI ,  JUSTIN PHI ,  KARTIK RAMASWAMY ,  SERGIO FUKUDA SHOJI ,  DAISUKE SHIMIZU

IPC: H01J37/32

Abstract: Methods for RF pulse reflection reduction are provided herein. In some embodiments, a method for processing a substrate in a plasma enhanced substrate processing system using multi-level pulsed RF power includes; receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators, using the master RF generator to generate a transistor-transistor logic (TTL) signal having a base frequency and a first duty cycle, setting a multiplier for each RF generator, dividing the first duty cycle into a high level interval and a low level interval, determining a frequency command set for each RF generator and sending the frequency command set to each RF generator, wherein the frequency command set includes a frequency set point for each RF generator; and providing the plurality of pulsed RF power waveforms from the plurality of RF generators to a process chamber.

公开(公告)号：US20190362941A1

公开(公告)日：2019-11-28

申请号：US16533211

申请日：2019-08-06

Applicant: APPLIED MATERIALS, INC.

Inventor： KATSUMASA KAWASAKI

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and systems for RF pulse reflection reduction are provided herein. In some embodiments, a method includes (a) receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators during a first duty cycle, (b) dividing the first duty cycle into a plurality of equal time intervals, (c) for each RF generator, determining a frequency command set for all intervals and send the frequency command set to the RF generator, wherein the frequency command set includes a frequency set point for each of the intervals in the plurality of equal time intervals, and (d) providing a plurality of RF power waveforms from a plurality of RF generators to a process chamber during a first duty cycle according to the frequency command set sent to each RF generator.

公开(公告)号：US20180261430A1

公开(公告)日：2018-09-13

申请号：US15457798

申请日：2017-03-13

Applicant: APPLIED MATERIALS, INC.

Inventor： KATSUMASA KAWASAKI

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and systems for RF pulse reflection reduction are provided herein. In some embodiments, a method includes (a) receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators during a first duty cycle, (b) dividing the first duty cycle into a plurality of equal time intervals, (c) for each RF generator, determining a frequency command set for all intervals and send the frequency command set to the RF generator, wherein the frequency command set includes a frequency set point for each of the intervals in the plurality of equal time intervals, and (d) providing a plurality of RF power waveforms from a plurality of RF generators to a process chamber during a first duty cycle according to the frequency command set sent to each RF generator.

公开(公告)号：US20130213935A1

公开(公告)日：2013-08-22

申请号：US13849729

申请日：2013-03-25

Applicant: APPLIED MATERIALS, INC.

Inventor： BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

IPC: C23F1/00

CPC classification number: C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，蚀刻介电层的方法包括通过脉冲具有第一占空比的第一RF源信号来产生等离子体; 向所述等离子体施加具有第二占空比的第二RF偏置信号; 向所述等离子体施加具有第三占空比的第三RF偏置信号，其中所述第一，第二和第三信号被同步; 调整所述第一RF源信号和所述第二或第三RF偏置信号中的至少一个之间的相位差，以控制所述等离子体中的等离子体或电荷积聚中的等离子体离子密度不均匀性中的至少一个; 并用等离子体蚀刻电介质层。