公开(公告)号：US20250069895A1

公开(公告)日：2025-02-27

申请号：US18236042

申请日：2023-08-21

Applicant: Applied Materials, Inc.

Inventor： Anatoli Chlenov ,  Kenji Takeshita ,  Alok Ranjan ,  Qian Fu ,  Hikaru Watanabe ,  Akhil Mehrotra ,  Lei Liao ,  Zhonghua Yao ,  Sonam Dorje Sherpa

IPC: H01L21/311 ,  H01J37/32

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of a silicon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The contacting may etch a feature in the layer of silicon-containing material. A substrate support pedestal temperature may be maintained at less than or about −20° C. during the semiconductor processing method.

公开(公告)号：US11373877B2

公开(公告)日：2022-06-28

申请号：US16846869

申请日：2020-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Daisuke Shimizu ,  Taiki Hatakeyama ,  Shinichi Koseki ,  Sean S. Kang ,  Jairaj Joseph Payyapilly ,  Hikaru Watanabe

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US20230057145A1

公开(公告)日：2023-02-23

申请号：US17831781

申请日：2022-06-03

Applicant: Applied Materials, Inc.

Inventor： DAISUKE SHIMIZU ,  Kenji Takeshita ,  James D. Carducci ,  Li Ling ,  Hikaru Watanabe ,  Kenneth S. Collins ,  Michael R. Rice

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma treatment chamber comprises one or more sidewalls and a support surface within the sidewalls holds a workpiece. An array of individual gas injectors is distributed about the sidewalls. Pump ports are along the sidewalls to eject gas from the chamber. Aa etch rate uniformity of a material on the workpiece is controlled by: using the array gas injectors to inject one or more gas flows in across the workpiece; injecting a first gas flow from a first set of adjacent individual gas injectors to etch the materials on the workpiece; and simultaneously injecting a second gas flow from remaining gas injectors. The second gas flow either dilutes the first gas flow to reduce an area on the workpiece having a faster etch rate, or acts as an additional etchant to increase the etch rate in the area of the workpiece having the faster etch rate.