公开(公告)号：US12046449B2

公开(公告)日：2024-07-23

申请号：US17726930

申请日：2022-04-22

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Katsumasa Kawasaki ,  Kartik Ramaswamy ,  Yang Yang ,  Nicolas John Bright

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32146 ,  H01J37/32183 ,  H01J37/32935 ,  H03H7/38 ,  H01J2237/24564 ,  H01J2237/334

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first sensor operably connected to the input and a second sensor operably connected to the output and configured to measure impedance during operation, at least one variable capacitor connected to the first sensor and the second sensor and a controller, based on a measured impedance, configured to tune the at least one variable capacitor of the matching network to a first target position based on weighted output impedance values measured at pulse states of a voltage waveform and to tune the at least one variable capacitor to a second target position based on weighted input impedance values measured at the pulse states of the voltage waveform.

公开(公告)号：US11603591B2

公开(公告)日：2023-03-14

申请号：US16982955

申请日：2018-10-16

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Yang Yang ,  Pramit Manna ,  Kartik Ramaswamy ,  Takehito Koshizawa ,  Abhijit B. Mallick

IPC: C23C16/26 ,  C23C16/503 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02

Abstract: Methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, use a plasma-enhanced chemical vapor deposition (PECVD) process. In particular, the methods utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

公开(公告)号：US11462386B2

公开(公告)日：2022-10-04

申请号：US16716965

申请日：2019-12-17

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Manivannan Thothadri ,  Chien-An Chen ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/305 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/304 ,  H01J37/147

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US11430634B2

公开(公告)日：2022-08-30

申请号：US17080802

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Kartik Ramaswamy ,  Yang Yang ,  Manivannan Thothadri ,  Chien-An Chen

IPC: H01J37/305 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/304 ,  H01J37/147

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US20210296131A1

公开(公告)日：2021-09-23

申请号：US17333790

申请日：2021-05-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US20210287907A1

公开(公告)日：2021-09-16

申请号：US17336580

申请日：2021-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US11043372B2

公开(公告)日：2021-06-22

申请号：US15979842

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Yang Yang ,  Pramit Manna ,  Kartik Ramaswamy ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/683 ,  H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01J37/32 ,  C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  G03F7/20 ,  H01L21/67 ,  C23C16/458 ,  C23C16/26 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/11556

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.

公开(公告)号：US10475626B2

公开(公告)日：2019-11-12

申请号：US14660531

申请日：2015-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Leonid Dorf ,  Yang Yang

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.

公开(公告)号：US10170278B2

公开(公告)日：2019-01-01

申请号：US13833220

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Yang Yang ,  Steven Lane

IPC: H01J37/32

Abstract: Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis.

公开(公告)号：US10141166B2

公开(公告)日：2018-11-27

申请号：US14460640

申请日：2014-08-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Lawrence Wong ,  Kartik Ramaswamy ,  Yang Yang ,  Steven Lane ,  Richard Fovell

IPC: G06F19/00 ,  H01J37/32 ,  H01L21/67 ,  C23F1/00

Abstract: Plural sensors on an interior surface of a reactor chamber are linked by respective RF communication channels to a hub inside the reactor chamber, which in turn is linked to a process controller outside of the chamber.