公开(公告)号：US11043375B2

公开(公告)日：2021-06-22

申请号：US16055974

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Yang Yang ,  Eswaranand Venkatasubramanian ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Gonzalo Monroy ,  Lucy Zhiping Chen ,  Yue Guo

IPC: C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  C23C16/44 ,  C23C14/34 ,  C23C14/06 ,  H01L21/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/311

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electron emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

公开(公告)号：US20210296131A1

公开(公告)日：2021-09-23

申请号：US17333790

申请日：2021-05-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US20210287907A1

公开(公告)日：2021-09-16

申请号：US17336580

申请日：2021-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US11651966B2

公开(公告)日：2023-05-16

申请号：US17336580

申请日：2021-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/3053 ,  H01J37/3255 ,  H01J37/32137 ,  H01J37/32568 ,  H01L21/67069 ,  H01J37/32091 ,  H01J37/32119 ,  H01J37/32183 ,  H01J2237/002 ,  H01J2237/3174 ,  H01J2237/3341

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US10790153B2

公开(公告)日：2020-09-29

申请号：US16391263

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Yang Yang ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Gonzalo Monroy ,  Lucy Zhiping Chen

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/3213

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.

公开(公告)号：US11043387B2

公开(公告)日：2021-06-22

申请号：US16668107

申请日：2019-10-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US20210134599A1

公开(公告)日：2021-05-06

申请号：US16668107

申请日：2019-10-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US10707086B2

公开(公告)日：2020-07-07

申请号：US16239170

申请日：2019-01-03

Applicant: Applied Materials, Inc.

Inventor： Yang Yang ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Gonzalo Monroy ,  Lucy Zhiping Chen ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01J37/305 ,  H01L21/67

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.

公开(公告)号：US10249495B2

公开(公告)日：2019-04-02

申请号：US15195640

申请日：2016-06-28

Applicant: Applied Materials, Inc.

Inventor： Yang Yang ,  Lucy Chen ,  Jie Zhou ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Srinivas D. Nemani ,  Chentsau Ying ,  Jingjing Liu ,  Steven Lane ,  Gonzalo Monroy ,  James D. Carducci

IPC: C23C16/26 ,  H01L21/033 ,  C23C16/505 ,  C23C16/509 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/308 ,  H01L21/3213 ,  C01B32/25 ,  H01L21/762

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.