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公开(公告)号:US12080519B2
公开(公告)日:2024-09-03
申请号:US17843830
申请日:2022-06-17
Applicant: Applied Materials, Inc.
Inventor: Jie Yu , Yue Guo , Kartik Ramaswamy , Tao Zhang , Shahid Rauf , John Forster , Sidharth Bhatia , Rong Gang Zheng
IPC: H01J37/32
CPC classification number: H01J37/32183 , H01J37/32926
Abstract: Embodiments disclosed herein include a dynamic load simulator. In an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RF controller. In an embodiment, the smart RF controller comprises a dynamic load generator, and a reverse match controller.
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公开(公告)号:US12046449B2
公开(公告)日:2024-07-23
申请号:US17726930
申请日:2022-04-22
Applicant: Applied Materials, Inc.
Inventor: Yue Guo , Katsumasa Kawasaki , Kartik Ramaswamy , Yang Yang , Nicolas John Bright
CPC classification number: H01J37/32146 , H01J37/32183 , H01J37/32935 , H03H7/38 , H01J2237/24564 , H01J2237/334
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first sensor operably connected to the input and a second sensor operably connected to the output and configured to measure impedance during operation, at least one variable capacitor connected to the first sensor and the second sensor and a controller, based on a measured impedance, configured to tune the at least one variable capacitor of the matching network to a first target position based on weighted output impedance values measured at pulse states of a voltage waveform and to tune the at least one variable capacitor to a second target position based on weighted input impedance values measured at the pulse states of the voltage waveform.
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公开(公告)号:US11462389B2
公开(公告)日:2022-10-04
申请号:US17315259
申请日:2021-05-07
Applicant: Applied Materials, Inc.
Inventor: Leonid Dorf , Rajinder Dhindsa , James Rogers , Daniel Sang Byun , Evgeny Kamenetskiy , Yue Guo , Kartik Ramaswamy , Valentin N. Todorow , Olivier Luere , Jonathan Kolbeck , Linying Cui
IPC: H01J37/32 , H01L21/311 , H01L21/3065 , H01L21/683
Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.
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公开(公告)号:US20210296131A1
公开(公告)日:2021-09-23
申请号:US17333790
申请日:2021-05-28
Applicant: APPLIED MATERIALS, INC.
Inventor: Kartik Ramaswamy , Yang Yang , Kenneth Collins , Steven Lane , Gonzalo Monroy , Yue Guo
IPC: H01L21/3065 , H01J37/305 , H01J37/32 , H01L21/67
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.
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公开(公告)号:US20210287907A1
公开(公告)日:2021-09-16
申请号:US17336580
申请日:2021-06-02
Applicant: APPLIED MATERIALS, INC.
Inventor: Kartik Ramaswamy , Yang Yang , Kenneth Collins , Steven Lane , Gonzalo Monroy , Yue Guo
IPC: H01L21/3065 , H01J37/305 , H01J37/32 , H01L21/67
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.
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公开(公告)号:US10418225B2
公开(公告)日:2019-09-17
申请号:US16107855
申请日:2018-08-21
Applicant: Applied Materials, Inc.
Inventor: Kenneth S. Collins , Michael R. Rice , Kartik Ramaswamy , James D. Carducci , Yue Guo , Olga Regelman
IPC: H01J37/32
Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
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公开(公告)号:US10312056B2
公开(公告)日:2019-06-04
申请号:US16059608
申请日:2018-08-09
Applicant: Applied Materials, Inc.
Inventor: Kenneth S. Collins , Michael R. Rice , Kartik Ramaswamy , James D. Carducci , Yue Guo , Olga Regelman
IPC: H01J37/32
Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
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公开(公告)号:US12237148B2
公开(公告)日:2025-02-25
申请号:US18375886
申请日:2023-10-02
Applicant: Applied Materials, Inc.
Inventor: Leonid Dorf , Rajinder Dhindsa , James Rogers , Daniel Sang Byun , Evgeny Kamenetskiy , Yue Guo , Kartik Ramaswamy , Valentin N. Todorow , Olivier Luere , Linying Cui
IPC: H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/683
Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.
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公开(公告)号:US12136537B2
公开(公告)日:2024-11-05
申请号:US17963146
申请日:2022-10-10
Applicant: Applied Materials, Inc.
Inventor: Yue Guo , Kartik Ramaswamy , Farhad Moghadam , Yang Yang
Abstract: Embodiments provided herein generally include apparatus and methods in a plasma processing system for rapid and inexpensive repair and replacement of RF sensors necessary for the operation of radio frequency (RF) power generation and impedance matching equipment used for generating a plasma in a plasma chamber during semiconductor processing therein. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for batch processing of a plurality of semiconductor wafers during the manufacturing process. Operational settings of a master plasma processing system may be used to control the operation of a plurality of slave processing systems. In addition, the operational settings of the master plasma processing system may be recorded and reused for controlling the plurality of slave processing systems.
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公开(公告)号:US12111341B2
公开(公告)日:2024-10-08
申请号:US17960666
申请日:2022-10-05
Applicant: Applied Materials, Inc.
Inventor: Yue Guo , Yang Yang , Kartik Ramaswamy , Fernando Silveira , A N M Wasekul Azad
IPC: G01R29/08
CPC classification number: G01R29/0885
Abstract: Embodiments of the disclosure include an electric field measurement system that includes a first light source, a first light sensor configured to receive electromagnetic energy transmitted from the first light source, an electro-optic sensor, and a controller. The electro-optic sensor may include a package comprising a first electro-optic crystal disposed within a body; and at least one optical fiber. The optical fiber is configured to transmit electromagnetic energy transmitted from the first light source to a surface of the first electro-optic crystal, and transmit at least a portion of the electromagnetic energy transmitted to the surface of the first electro-optic crystal and subsequently passed through at least a portion of the first electro-optic crystal to the first light sensor that is configured to generate a signal based on an attribute of the electromagnetic energy received by the first light sensor from the at least one optical fiber. The controller is configured to generate a command signal based on a signal received from the first light sensor.
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