公开(公告)号：US10957518B2

公开(公告)日：2021-03-23

申请号：US16828694

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Lawrence Wong ,  Steven Lane ,  Yang Yang ,  Srinivas D. Nemani ,  Praburam Gopalraja

IPC: H01J37/32 ,  H01H1/46

Abstract: A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.

公开(公告)号：US10784085B2

公开(公告)日：2020-09-22

申请号：US14832280

申请日：2015-08-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Yang Yang ,  Lawrence Wong

IPC: H05H1/12 ,  H01J37/32

Abstract: An external magnetic filter to trap electrons surrounds a reactor chamber and has multiple magnets arranged in a circle, the magnetic orientation of each individual magnet being rotated relative to the orientation of the adjacent individual magnet by a difference angle that is a function of the arc subtended by the individual magnet.

公开(公告)号：US20160225590A1

公开(公告)日：2016-08-04

申请号：US14985688

申请日：2015-12-31

Applicant: Applied Materials, Inc.

Inventor： Joseph F. Aubuchon ,  Tza-Jing Gung ,  Travis Lee Koh ,  Nattaworn Nuntaworanuch ,  Sheng-Chin Kung ,  Steven Lane ,  Kartik Ramaswamy ,  Yang Yang

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3211

Abstract: Embodiments described herein generally relate to plasma process apparatus. In one embodiment, the plasma process apparatus includes a plasma source assembly. The plasma source assembly may include a first coil, a second coil surrounding the first coil, and a magnetic device disposed outside the first and inside the second coil. The magnet enables additional tuning which improves uniformity control of the processes on the substrate.

Abstract translation: 本文描述的实施例一般涉及等离子体处理装置。 在一个实施例中，等离子体处理装置包括等离子体源组件。 等离子体源组件可以包括第一线圈，围绕第一线圈的第二线圈和设置在第二线圈的第一和内侧的磁性装置。 该磁体可实现额外的调谐，从而提高基板上工艺的均匀性控制。

公开(公告)号：US20140339980A1

公开(公告)日：2014-11-20

申请号：US14307945

申请日：2014-06-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ming-Feng Wu ,  Leonid Dorf ,  Shahid Rauf ,  Ying Zhang ,  Kenneth S. Collins ,  Hamid Tavassoli ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Abstract translation: 在用于处理工件的等离子体反应器中，使用电子束作为等离子体源，并且将远程自由基源与处理室结合。

公开(公告)号：US20140069584A1

公开(公告)日：2014-03-13

申请号：US13958875

申请日：2013-08-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Yang Yang ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Douglas A. Buchberger, JR. ,  Lawrence Wong ,  Nipun Misra

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/6833

Abstract: A plasma reactor includes an RF-driven ceiling electrode overlying a process zone and two (or more) counter electrodes underlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract translation: 等离子体反应器包括覆盖工艺区域的RF驱动的天花板电极和处理区域下面的两个（或更多个）对置电极，并且面对处理区域的不同部分，连接在相应电极之间的两个（或更多个）可变电抗器 并控制控制可变电抗以控制诸如等离子体离子密度或离子能量之类的等离子体参数分布的控制器。

公开(公告)号：US20210296131A1

公开(公告)日：2021-09-23

申请号：US17333790

申请日：2021-05-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US20210287907A1

公开(公告)日：2021-09-16

申请号：US17336580

申请日：2021-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US10170278B2

公开(公告)日：2019-01-01

申请号：US13833220

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Yang Yang ,  Steven Lane

IPC: H01J37/32

Abstract: Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis.

公开(公告)号：US10141166B2

公开(公告)日：2018-11-27

申请号：US14460640

申请日：2014-08-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Lawrence Wong ,  Kartik Ramaswamy ,  Yang Yang ,  Steven Lane ,  Richard Fovell

IPC: G06F19/00 ,  H01J37/32 ,  H01L21/67 ,  C23F1/00

Abstract: Plural sensors on an interior surface of a reactor chamber are linked by respective RF communication channels to a hub inside the reactor chamber, which in turn is linked to a process controller outside of the chamber.

公开(公告)号：US10017857B2

公开(公告)日：2018-07-10

申请号：US15144736

申请日：2016-05-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Yang Yang ,  Kartik Ramaswamy ,  Steven Lane ,  Lawrence Wong

IPC: C23C16/00 ,  H01L21/306 ,  C23C16/505 ,  H01J37/32 ,  H01L21/687 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C23C16/505 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32715 ,  H01L21/68742 ,  H01L21/68785

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.