公开(公告)号：US20160225590A1

公开(公告)日：2016-08-04

申请号：US14985688

申请日：2015-12-31

Applicant: Applied Materials, Inc.

Inventor： Joseph F. Aubuchon ,  Tza-Jing Gung ,  Travis Lee Koh ,  Nattaworn Nuntaworanuch ,  Sheng-Chin Kung ,  Steven Lane ,  Kartik Ramaswamy ,  Yang Yang

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3211

Abstract: Embodiments described herein generally relate to plasma process apparatus. In one embodiment, the plasma process apparatus includes a plasma source assembly. The plasma source assembly may include a first coil, a second coil surrounding the first coil, and a magnetic device disposed outside the first and inside the second coil. The magnet enables additional tuning which improves uniformity control of the processes on the substrate.

Abstract translation: 本文描述的实施例一般涉及等离子体处理装置。 在一个实施例中，等离子体处理装置包括等离子体源组件。 等离子体源组件可以包括第一线圈，围绕第一线圈的第二线圈和设置在第二线圈的第一和内侧的磁性装置。 该磁体可实现额外的调谐，从而提高基板上工艺的均匀性控制。

公开(公告)号：US10714372B2

公开(公告)日：2020-07-14

申请号：US15710763

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Philip Allan Kraus ,  Travis Lee Koh ,  Christian Amormino ,  Jaeyong Cho

IPC: H01L21/00 ,  H01L21/683 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455 ,  H01L21/67 ,  H01L21/687 ,  C23C16/50 ,  C23C16/46 ,  H01L21/02 ,  H01L21/223 ,  H01L21/3065

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of DC voltage through a switching system to electrodes disposed through the ESC substrate support, or to electrodes disposed on a surface of the ESC, or to electrodes embedded in the ESC substrate support. The switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. During processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.

公开(公告)号：US10904996B2

公开(公告)日：2021-01-26

申请号：US15710667

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Travis Lee Koh ,  Haitao Wang ,  Philip Allan Kraus ,  Vijay D. Parkhe ,  Daniel Distaso ,  Christopher A. Rowland ,  Mark Markovsky ,  Robert Casanova

IPC: H05H1/34 ,  H02N13/00 ,  H05B7/18 ,  H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.

公开(公告)号：US10249479B2

公开(公告)日：2019-04-02

申请号：US14985688

申请日：2015-12-31

Applicant: Applied Materials, Inc.

Inventor： Joseph F. Aubuchon ,  Tza-Jing Gung ,  Travis Lee Koh ,  Nattaworn Boss Nunta ,  Sheng-Chin Kung ,  Steven Lane ,  Kartik Ramaswamy ,  Yang Yang

IPC: H01J37/32

Abstract: Embodiments described herein generally relate to plasma process apparatus. In one embodiment, the plasma process apparatus includes a plasma source assembly. The plasma source assembly may include a first coil, a second coil surrounding the first coil, and a magnetic device disposed outside the first and inside the second coil. The magnet enables additional tuning which improves uniformity control of the processes on the substrate.